Article contents
Fabrication of a Free-Standing, Synthetic, Single Crystal Diamond Plate Using Ion Implantation and Plasma-Enhanced Chemical Vapor Deposition
Published online by Cambridge University Press: 21 February 2011
Abstract
Using a specific combination of energetic and chemical processes we have grown homoepitaxial diamond on and lifted it off of a type Ia natural C(100) crystal. Before growth, the C(100) crystal is exposed to a self implant of 190keV energy and dose of 1E16 cm-2. Low temperature (~600°C) homoepitaxial diamond growth conditions were used that are based on water-alcohol source chemistries. To achieve layer separation (lift-off), samples were annealed to a temperature sufficient to graphitize the buried implant-damaged region. Contactless electrochemical etching was found to remove the graphite, and a transparent synthetic (100) single crystal diamond plate of 17.5μm thickness was lifted off. This free-standing diamond single crystal plate was characterized and found to be comparable to homoepitaxial films grown on unimplanted single crystal diamond.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1995
References
- 1
- Cited by