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The Fabrication and Thermoelectric Properties of Amorphous Si-Ge-Au Bulk Samples

Published online by Cambridge University Press:  21 March 2011

Sang Min Lee ,
Yoichi Okamoto ,
Oshio Kawahara  and
Jun Morimoto
Sang Min Lee
Affiliation:
Department of Materials Science and Engineering, National Defense Academy 1-10-20 Hashirimizu, Yokosuka, Kanagawa 239-8686, Japan
Yoichi Okamoto
Affiliation:
Department of Materials Science and Engineering, National Defense Academy 1-10-20 Hashirimizu, Yokosuka, Kanagawa 239-8686, Japan
Oshio Kawahara
Affiliation:
Department of Materials Science and Engineering, National Defense Academy 1-10-20 Hashirimizu, Yokosuka, Kanagawa 239-8686, Japan
Jun Morimoto
Affiliation:
Department of Materials Science and Engineering, National Defense Academy 1-10-20 Hashirimizu, Yokosuka, Kanagawa 239-8686, Japan
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Abstract

The amorphous Si-Ge-Au bulk samples were fabricated with using the melt spinning method for the practical power supply or cooling devices. X-ray diffraction results showed that our samples were amorphous and the thermoelectric properties were measured by DC method. Although the electrical resistivity of the bulk sample was higher than that of the amorphous thin film, the thermoelectric power of the bulk sample was larger. The thermal conductivity of the amorphous Si-Ge-Au bulk sample was almost the same to the conventional crystalline Si-Ge bulk value. Consequently, non-dimensional figure of merit ZT is around 2 (at 600 K, • •=6.5 10λ-1V/K, • =1.9 10 ohm-m, • •= 6 W/mK) that is about ten times higher than the conventional crystalline Si-Ge bulk value.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 691: Symposium G – Thermoelectric Materials 2001--Research and Applications , 2001 , G8.9
Copyright
Copyright © Materials Research Society 2002

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References

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