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Fabrication and Electrical Properties of Metal/Double-Insulator/Metal Diode

Published online by Cambridge University Press:  01 February 2011

Kwang Nam Choi ,
Jun Woo Park ,
Hosun Lee  and
Kwan Soo Chung
Kwang Nam Choi
Affiliation:
[email protected], United States
Jun Woo Park
Affiliation:
[email protected], Kyunghee Univeristy, physics, suwon, Korea, Republic of
Hosun Lee
Affiliation:
[email protected], Kyunghee University, physics, suwon, Korea, Republic of
Kwan Soo Chung
Affiliation:
[email protected], Kyunghee University, Electronic engineering, suwon, Korea, Republic of
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Abstract

We have fabricated two metal/double insulator/metal diodes using a sputtering system and atomic layer deposition. Here, we show metal/double insulator/metal diode applied as a switch element. The diode exhibits good rectifying characteristics at room temperature. We used the electrode material with Pt and insulators were HfO2/ZrO2 and NiO/ZnO each. The devices were fabricated using the lithographic system and top electrode sizes were 30 µm x 30 µ;m. The double insulator diode produces an enhanced nonlinearity by incorporating two adjacent oxides instead of the single oxide layer of the MIM diode. In the double insulator diode the mode of tunneling under positive applied biases can be made different from that under negative applied biases resulting in improved asymmetry.

Keywords

electrical propertieselectronic structureinsulator
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1108: Symposium A – Performance and Reliability of Semiconductor Devices , 2008 , 1108-A09-11
Copyright
Copyright © Materials Research Society 2009

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References

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