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Fabrication and Characterization of InxAlyGa1−x−yN Ultraviolet Detectors

Published online by Cambridge University Press:  17 March 2011

Tom N. Oder ,
Jing Li ,
Jingyu Lin  and
Hongxing Jiang
Tom N. Oder
Affiliation:
Department of Physics, Kansas State University, Manhattan, Kansas, 66506-2601, U.S.A.
Jing Li
Affiliation:
Department of Physics, Kansas State University, Manhattan, Kansas, 66506-2601, U.S.A.
Jingyu Lin
Affiliation:
Department of Physics, Kansas State University, Manhattan, Kansas, 66506-2601, U.S.A.
Hongxing Jiang
Affiliation:
Department of Physics, Kansas State University, Manhattan, Kansas, 66506-2601, U.S.A.Electronic mail:[email protected]
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Abstract

Ultraviolet (UV) photoconductive detectors based on InxAlyGa1−x−yN quaternary alloy lattice-matched to GaN have been fabricated and characterized. The detectors consisted of about 0.1 μm thick InxAlyGa1−x−yN quaternary alloy of different In (x) and Al (y) compositions grown by metalorganic chemical vapor deposition (MOCVD). The films were characterized by different techniques including x-ray diffraction (XRD), Rutherford backscattering spectroscopy (RBS), atomic force microscopy (AFM), Hall-effect and time-resolved photoluminescence measurements. The characteristics of these UV detectors including the cut-off wavelength, photoresponsivity and device speed have been measured. The cut-off wavelength of the InxAlyGa1−x−yN detectors was found to vary to the deep UV range with varying In and Al compositions. The most important and intriguing result is that the responsivity of the InxAlyGa1−xyN quaternary alloy exceeded that of AlGaN alloy of comparable cut-off wavelength by a factor of five. This makes the nitride quaternary alloy very important material for solar blind UV detector applications in the deep UV range where Al rich AlGaN alloys have problems with low quantum efficiency and cracks due in part to lattice mismatch with GaN.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G10.7
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1. Munoz, E., Monroy, E., Garrido, J.A., Izpura, I., Sanchez, F.J., Sanchez-Garcia, M.A., Calleja, E., Beaumont, B., and Gibart, P., Appl. Phys. Lett. 71, 870 (1997).Google Scholar
2. Monroy, E., Munoz, E., Sanchez, F.J., Calle, F., Calleja, E., Beaumont, B., Gibart, P., Munoz, J.A. and Cusso, F., Semicond. Sci. Technol. 13, 1042 (1998).Google Scholar
3. Walker, D., Munroy, E., Kung, P., Hamilton, M., Sanchez, F.J., Diaz, J. and Razeghi, M., Appl. Phys. Lett. 74, 762 (1999).Google Scholar
4. Lim, B.W., Chen, Q.C., Yang, J.Y., and Khan, M. Ashif, Appl. Phys. Lett. 68, 3761 (1996).Google Scholar
5. Brown, J.D., Yu, Z., Matthews, J., Harney, S., Boney, J., Schetzina, J.F., Benson, J.D., Dang, K.W., Terrill, C., Nohava, T., Yang, W. and Krishnankutty, S., MRS Internet J. Nitride Semicond. Res. 4, 9 (1999).Google Scholar
6. Osinsky, A., Gangopadhyay, S., Lim, B.W., Anwar, M.Z., Khan, M.A., Kuksenkov, D.V. and Temkin, H., Appl. Phys. Lett. 72, 742 (1998).Google Scholar
7. McIntosh, F.G., Roberts, J.C., Aumer, M.E., Joshkin, V.A., Bedair, S.M. and ElMasry, N.A., MRS Internet J. Nitride Semicond. Res. 1, 43 (1996).Google Scholar
8. LeBoeuf, S. F., Aumer, M. E., and Bedair, S. M., Appl. Phys. Lett. 77, 97 (2000).Google Scholar
9. Khan, M. Ashif, Yang, J.W., Simin, G., Gaska, R., Shur, M.S., Loye, Hans-Conrad zur, Tamulaitis, G., Zukauskas, A., Smith, D.J., Chandrasekhar, D. and Bicknell-Tassius, R., Appl. Phys. Lett. 76, 1161 (2000).Google Scholar
10. Oder, T. N., Li, J., Lin, J. Y., and Jiang, H. X., Appl. Phys. Lett. 77, 791 (2000).Google Scholar
11. Yu, L.S., Qiao, D., Lau, S.S., Redwing, J.M., Lin, J.Y. and Jiang, H.X., J. Appl. Phys. 86, 2696 (1999).Google Scholar
12. Parish, G., Keller, S., Kozodoy, P., Ibbetson, J.P., Marchand, H., Fini, P.T., Fleischer, S.B., DenBaars, S.P., Mishra, U.K. and Tarsa, E.J., Appl. Phys. Lett. 75, 247 (1999).Google Scholar