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Fabrication and Characteristics of Low Doped Gallium-Zinc Oxide Thin Film Transistor

Published online by Cambridge University Press:  01 February 2011

Ved Prakash Verma ,
Dohyun Kim ,
Minhyon Jeon  and
Wonbong Choi
Ved Prakash Verma
Affiliation:
[email protected], Florida International University, Mechanical Engineering, 10555, West Flagler Street, miami, FL, 33174, United States
Dohyun Kim
Affiliation:
[email protected], Florida International University, Mechanical Engineering, 10555, West Flagler Street, miami, FL, 33174, United States
Minhyon Jeon
Affiliation:
[email protected], Inje University, School of Nanoengineering, Gimhae, 621-749, Korea, Republic of
Wonbong Choi
Affiliation:
[email protected], Florida International University, Mechanical Engineering, 10555, West Flagler Street, miami, FL, 33174, United States
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Abstract

Thin film transistor (TFT) with low (1%wt) Ga-doped ZnO (GZO) as an active channel on SiO2/Si substrate has been fabricated at room temperature by rf-magnetron sputtering. The devices show a mobility of 5.7 cm2/V.s at low operation voltage (<5V), a low turn-on voltage of 0.5 V and sub-threshold swing of 85 mV/decade. The TFT device performance is significantly affected by vacuum-level and annealing temperature, which can be attributed to the removal of chemisorped oxygen in the active channel surface. Low doped GZO is a new class of high performance TFT channel material that is easy to process.

Keywords

thin filmsemiconductingenvironmentally benign
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 963: Symposium Q – Nanowires and Carbon Nanotubes – Science and Applications , 2006 , 0963-Q12-01
Copyright
Copyright © Materials Research Society 2007

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