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Fabrication and Characteristics of Ferroelectric/Fluorescent Oxide Structures for Ferroelectrically Controlled Emission Devices

Published online by Cambridge University Press:  14 February 2012

Koji Aizawa ,
Naoya Hashimoto ,
Hiroyuki Inagaki ,
Hironori Oshiro ,
Hideo Horibe  and
Yoshiaki Tokunaga
Koji Aizawa
Affiliation:
Kanazawa Institute of Technology 7-1 Ohgigaoka, Nonoichi, Ishikawa 921-8501, Japan
Naoya Hashimoto
Affiliation:
Kanazawa Institute of Technology 7-1 Ohgigaoka, Nonoichi, Ishikawa 921-8501, Japan
Hiroyuki Inagaki
Affiliation:
Kanazawa Institute of Technology 7-1 Ohgigaoka, Nonoichi, Ishikawa 921-8501, Japan
Hironori Oshiro
Affiliation:
Kanazawa Institute of Technology 7-1 Ohgigaoka, Nonoichi, Ishikawa 921-8501, Japan
Hideo Horibe
Affiliation:
Kanazawa Institute of Technology 7-1 Ohgigaoka, Nonoichi, Ishikawa 921-8501, Japan
Yoshiaki Tokunaga
Affiliation:
Kanazawa Institute of Technology 7-1 Ohgigaoka, Nonoichi, Ishikawa 921-8501, Japan
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Abstract

The crystallinity, electrical, and optical properties of the ferroelectric/fluorescent oxide structures using sol-gel-derived (Ba0.6Sr0.4)TiO3 (BST) and (Sr0.8Eu0.2)Bi2.2Ta2O9 (Eu-SBT) grown on STO(110) single crystal substrates were introduced for the first time. In the present structures, the SBT films partly included a (116)-oriented Eu-SBT crystallite. The polarization vs. voltage characteristics of the BST/Eu-SBT structures showed the hysteresis loop caused by spontaneous polarization reversal, and then several emission peaks from Eu3+ ion were observed in a photoluminescence spectrum of a present BST/Eu-SBT structure.

Keywords

crystallineferroelectricoptical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1397: Symposium P – Ferroelectric and Multiferroic Materials , 2012 , mrsf11-1397-p13-03
Copyright
Copyright © Materials Research Society 2012

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References

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