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External Gettering Comparison and Structural Characterization of Single and Polycrystalline Silicon

Published online by Cambridge University Press:  26 February 2011

Henry Hieslmair ,
Scott McHugo  and
Eicke Weber
Henry Hieslmair
Affiliation:
University of California - Berkeley, Department of Materials Science, Berkeley, CA 94720
Scott McHugo
Affiliation:
University of California - Berkeley, Department of Materials Science, Berkeley, CA 94720
Eicke Weber
Affiliation:
University of California - Berkeley, Department of Materials Science, Berkeley, CA 94720
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Abstract

Various silicon samples, both single and polycrystalline, were intentionally contaminated and externally gettered using phosphorus, aluminum and co- phosphorus/aluminum gettering. Gettering efficiencies were quantified via diffusion length improvements. Structural characterization was used to correlate defects with low gettering efficiencies. External gettering was found to be particularly effective at recovering diffusion length in large grain polycrystalline silicon and solar grade single crystal silicon despite Fe contamination and high defect densities. One of two explanations is possible, 1) the structural defects are initially undecorated and are completely gettered after Fe contamination, or 2) metal decoration on as-grown structural defects are structurally and/or chemically different from intentional Fe decoration.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 327
Copyright
Copyright © Materials Research Society 1995

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