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Experimental Determination of the Distribution of Tail States of Hydrogenated Amorphous Silicon: A Transient Photocurrent Analysis

Published online by Cambridge University Press:  15 February 2011

D. P. Webb ,
F. Y. M. Chan ,
X. C. Zou ,
Y. C. Chan ,
Y. W. Lam ,
S. H. Lin ,
S. K. O'Leary  and
P. K. Lim
D. P. Webb
Affiliation:
Department of Electronic Engineering, City University of Hong Kong, Hong Kong
F. Y. M. Chan
Affiliation:
Department of Electronic Engineering, City University of Hong Kong, Hong Kong
X. C. Zou
Affiliation:
Department of Electronic Engineering, City University of Hong Kong, Hong Kong
Y. C. Chan
Affiliation:
Department of Electronic Engineering, City University of Hong Kong, Hong Kong
Y. W. Lam
Affiliation:
Department of Electronic Engineering, City University of Hong Kong, Hong Kong
S. H. Lin
Affiliation:
Department of Electronic Engineering, City University of Hong Kong, Hong Kong
S. K. O'Leary
Affiliation:
Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York
P. K. Lim
Affiliation:
Department of Physics, Hong Kong Baptist University, Hong Kong
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Abstract

Recent experimental developments have cast doubt on the validity of the common assumption that the distribution of tail states of hydrogenated amorphous silicon exhibits a single exponential functional form. We employ transient photocurrent decay measurements to determine this distribution of tail states. In our approach, however, we determine the distribution of tail states directly from the experimental data, without assuming, a priori, a specific functional form. It is found that these experimental results are consistent with other more recent experimental determinations of the distribution of tail states, suggesting the possibility of deviations from a single exponential distribution of tail states in hydrogenated amorphous silicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 467: Symposium A – Amorphous and Microcrystalline Silicon Technology - 1997 , 1997 , 257
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

[1] Spear, W. E. and LeComber, P. G., Philos. Mag. 33, 935 ( 1976).Google Scholar
[2] Street, R. A., Hydrogenated Amorphous Silicon (Cambridge, New York, 1991).Google Scholar
[3] Tiedje, T., Cebulka, J. M., Morel, D. L., and Abeles, B., Phys. Rev. Lett. 46, 1425 ( 1981).Google Scholar
[4] Tiedje, T., in Hydrogenated Amorphous Silicon, Vol. 21C of Semiconductors and Semimetals, edited by Pankove, J. I. (Academic, New York, 1984), p. 207.Google Scholar
[5] Orenstein, J. and Kastner, M., Phys. Rev. Lett. 46, 1421 ( 1981).Google Scholar
[6] Dersch, H., Stuke, J., and Beichler, J., Phys. Stat. Sol. B 105, 265 ( 1981).Google Scholar
[7] Winer, K. and Ley, L., Phys. Rev. B 36, 6072 ( 1987).Google Scholar
[8] Michiel, H., Adriaenssens, G. J., and Davis, E. A., Phys. Rev. B 34, 2486 ( 1986).Google Scholar
[9] Street, R. A., SPIE - Physics of Amorphous Semiconductor Devices 763, 10 ( 1987).Google Scholar
[10] Longeaud, C. and Vanderhaghen, R., Philos. Mag. B 61, 277 ( 1990).Google Scholar
[11] Main, C., Brüggemann, R., Webb, D. P., and Reynolds, S., Solid State Commun. 83, 401 ( 1992).Google Scholar
[12] Main, C., Brüggemann, R., Webb, D. P., and Reynolds, S., J. Non-Cryst. Solids 164–166, 481 ( 1993).Google Scholar
[13] Cody, G. D., in Hydrogenated Amorphous Silicon, Vol. 21B of Semiconductors and Semimetals, edited by Pankove, J. I. (Academic, New York, 1984), p. 11.Google Scholar
[14] Lin, X., Wang, H., Lin, K., Yu, Y., and Fu, S., Thin Solid Films 237, 310 ( 1994).Google Scholar
[15] Spear, W. E., in Amorphous Silicon and Related Materials, Vol. 21B, edited by Fritzsche, H. (World Scientific, Singapore, 1989).Google Scholar
[16] O'Leary, S. K., Zukotynski, S., and Perz, J. M., Phys. Rev. B 51, 4143 ( 1995).Google Scholar
[17] Neamen, D. A., Semiconductor Physics and Devices (Irwin, Boston, 1992).Google Scholar