Hostname: page-component-78c5997874-xbtfd Total loading time: 0 Render date: 2024-11-02T23:24:19.584Z Has data issue: false hasContentIssue false
  • English
  • Français

Experimental Deformation Mechanics of Materials from their Near-Atomic-Resolution Defect Images

Published online by Cambridge University Press:  22 February 2011

H. C. Choi ,
A. F. Schwartzman  and
K.-S. Kim
H. C. Choi
Affiliation:
Division of Engineering, Brown University, Providence, RI 02912.
A. F. Schwartzman
Affiliation:
Division of Engineering, Brown University, Providence, RI 02912.
K.-S. Kim
Affiliation:
Division of Engineering, Brown University, Providence, RI 02912.
Get access

Abstract

A novel approach to quantitative interpretation of high-resolution electron microscopy images of defects in materials has been developed. The emphasis of this paper is on the methodology, which has been named Computational Fourier Transform Moiré Analysis. The essential principle of this technique is to extract an accurate displacement field about a defect from its near-atomic-resolution picture using digital Fourier transformation procedures. From this data, the displacement gradient can be calculated which yields much information on the experimental deformation mechanics of the material under investigation. As a by-product, we produce the computational Moiré pattern without the need of an external perfect reference lattice image normally associated with the interference phenomena. This method is illustrated using a bounding Frank partial dislocation for a Frank loop of the vacancy type. Results are presented on its strain field, Burgers vector and dislocation core shape and dimensions. Further mention will be made on the types of J-integral calculations that can result from this experimental study.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 239: Symposium D – Thin Films: Stresses and Mechanical Properties III , 1991 , 419
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Freund, L.B., J. Appl. Mech. 54, 553 (1987).Google Scholar
2. Schwartzman, A.F. and Sinclair, R., J. Electronic Materials 20, 805 (1991).Google Scholar
3. Mills, M.J. and Stadelmann, P., Phil. Mag. A 60, 355 (1989).Google Scholar
4. Hetherington, C.J.D. in High Resolution Electron Microscopy of Defects in Materials, edited by Sinclair, R., Smith, D.J. and Dahmen, U. (Mater. Res. Soc. Proc. 183, Pittsburgh, PA 1990) pp. 123–134;Google Scholar
Dahmen, U., Hetherington, C.J.D. and Westmacott, K.H., in Proc. of the 12th International Congress for Electron Microscopy, edited by Peachey, L.D. and Williams, D.B. (San Francisco Press, San Francisco, 1990), p. 338.Google Scholar
5. Kim, K.-S., Stigh, U. and Choi, H.C., J. Appl. Mech., in press (1992).Google Scholar