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Experimental and Model Studies of Dopant Segregation During Growth of Silicon Films by Molecular Beam Epitaxy
Published online by Cambridge University Press: 22 February 2011
Abstract
Dopant incorporation and surface segregation are studied for thermal Sb and Al cases. The values of the incorporation probability and the segregation ratio have been mainly determine by SIMS measurements. The doping kinetics is discussed using a multi-site model including high dopant surface coverage effects. The calculated results were in good agreement with experimental data.
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- Copyright © Materials Research Society 1991
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