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Expanding thermal plasma for low-k dielectrics deposition

Published online by Cambridge University Press:  01 February 2011

M. Creatore ,
Y. Barrell ,
W.M.M. Kessels  and
M.C.M. van de Sanden
M. Creatore
Affiliation:
Equilibrium and Transport in Plasmas, Department of Applied Physics Eindhoven University of Technology, P.O. Box 513, Eindhoven, The Netherlands
Y. Barrell
Affiliation:
Equilibrium and Transport in Plasmas, Department of Applied Physics Eindhoven University of Technology, P.O. Box 513, Eindhoven, The Netherlands
W.M.M. Kessels
Affiliation:
Equilibrium and Transport in Plasmas, Department of Applied Physics Eindhoven University of Technology, P.O. Box 513, Eindhoven, The Netherlands
M.C.M. van de Sanden
Affiliation:
Equilibrium and Transport in Plasmas, Department of Applied Physics Eindhoven University of Technology, P.O. Box 513, Eindhoven, The Netherlands
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Abstract

As the need for low-k dielectrics in the ULSI technology becomes urgent, the research primarily focuses on the deposition of novel materials with appropriate electrical properties and on the challenges concerning their integration with subsequent processing steps. In this framework we introduce the expanding thermal plasma as a novel remote technique for the deposition of low-k carbon-doped silicon dioxide films from argon/hexamethyldisiloxane/oxygen mixtures. We have obtained k values in the range 2.9-3.4 for films characterized by acceptable mechanical properties (hardness of 1 GPa).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 766: Symposium E – Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics - 2003 , 2003 , E6.9
Copyright
Copyright © Materials Research Society 2003

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References

[1] MRS Bulletin 22(10) (1997)Google Scholar
[2] Semiconductor International, June 2002 Google Scholar
[3] Kim, J.Y., Hwang, M.S., Kim, Y.H., Kim, H.J., Lee, Y., J. Appl. Phys. 90, 2469 (2001).Google Scholar
[4] Gielen, J.W.A.M., Kessels, W.M.M., Sanden, M.C.M. van de, Schram, D.C., J. Appl. Phys. 82, 2643 (1997).Google Scholar
[5] Gielen, J.W.A.M., Sanden, M.C.M. van de, Schram, D.C., Appl. Phys. Lett. 69, 152 (1996).Google Scholar
[6] Sanden, M.C.M. van de, Severens, R.J., Kessels, W.M.M., Meulenbroeks, R.F.G., Schram, D.C., J. Appl. Phys. 84, 2426 (1998).Google Scholar
[7] Creatore, M., Hest, M.F.A.M. van, Benedikt, J., Sanden, M.C.M. van de, MRS Proc. 715, 101 (2002).Google Scholar
[8] Sanden, M.C.M. van de, Regt, J.M. de, Schram, D. C., Plasma Sources Sci. Technol. 3, 511 (1994).Google Scholar
[9] Busch, K. W., Busch, M. A. (Eds.), “Cavity Ring Down Spectroscopy: An Ultratrace-Absorption Measurement Technique” (American Chemical Society, 1999)Google Scholar
[10] Engeln, R., Letourneur, K.G.Y., Boogaarts, M.G.H., van de Sanden, M.C.M., Schram, D.C., Chem. Phys. Lett. 310, 405 (1999).Google Scholar
[11] Creatore, M., Kilic, M., O'Brien, K., Groenen, R., Sanden, M.C.M. van de, Thin Solid Films 427, 137 (2003).Google Scholar
[12] Graaf, A. de, Hest, M.F.A.M. van, Sanden, M.C.M. van de, Letourneur, K.G. Y., Schram, D.C., Appl. Phys. Lett. 74, 2927 (1999).Google Scholar