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Excimer Laser-Induced Shallow Diffusion of Boron

Published online by Cambridge University Press:  28 February 2011

S. Kato ,
T. Nagahori ,
S. Matsumoto  and
T. Fujioka
S. Kato
Affiliation:
Department of Electrical Engineering, Keio University, Hiyoshi, Yokohama 223, Japan
T. Nagahori
Affiliation:
Department of Electrical Engineering, Keio University, Hiyoshi, Yokohama 223, Japan
S. Matsumoto
Affiliation:
Department of Electrical Engineering, Keio University, Hiyoshi, Yokohama 223, Japan
T. Fujioka
Affiliation:
Industrial Research Institute, Tokyo, 104, Japan
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Abstract

The very shallow junction of boron has been formed by the irradiation of ArF excimer laser on silicon substrate set in BF3 ambient. The sheet resistance decreases with the increase of the number of pulses and saturates above 150 pulses. It also decreases with increasing both gas pressure and laser energy density. The junction depth increases with increasing the number of pulses, ranging from about 400 Å to 2000 Å. It is confirmed from SIMS and four-point probe measurements that boron atoms diffused are electrically activated up to the concentration of about 1020cm−3.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 71: Symposium F – Materials Issues in Silicon Integrated Circuit Processing , 1986 , 459
Copyright
Copyright © Materials Research Society 1986

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