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Ex situ and in situ defect density measurements of a-Si:H by means of the cavity ring down absorption technique

Published online by Cambridge University Press:  17 March 2011

A.H.M. Smets ,
J.H. van Helden  and
M.C.M. van de Sanden
A.H.M. Smets
Affiliation:
Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The [email protected]
J.H. van Helden
Affiliation:
Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
M.C.M. van de Sanden
Affiliation:
Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands, [email protected]
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Abstract

For the first time it is demonstrated that the surface defect density can be measured using the cavity ring down (CRD) absorption technique and it is shown that CRD is more sensitive for surface defects than dual beam photoconductivity (DBP) technique. Ex situ measurements have shown that the surface defects of the oxidized a-Si:H surface are distributed over a surface region with thickness W(d). The obtained surface defect density is 1.0 × 1012 up to 1.4 × 1012 cm-2. During growth the a-Si:H surface defect density region has at least a thickness of 15 nm. During deposition of 15 nm a-Si:H the surface density increases up to a not yet saturated value of 1×1013 cm-2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 664: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2001 , 2001 , A22.4
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

[1]Matsuda, A., Nomoto, K., Takeuchi, Y., Suzuki, A., Yuuki, A., Perrin, J., Surf. Sci. 22, 50 (1990), J.L. Guizot, K. Nomoto, A. Matsuda, Surf. Sci. 244, 22 (1991)Google Scholar
[2]Doyle, J.R., Doughty, D.A., Gallagher, A., J. Appl. Phys. 68, 4375 (1990), J.R. Doyle, D.A. Doughty, A. Gallagher, J. Appl. Phys. 71, 4727 (1997), J.R. Doyle, D.A. Doughty, A. Gallagher, J. Appl. Phys. 71, 4771 (1992)Google Scholar
[3]Perrin, J., Takeda, Y., Hitano, N., Takeuchi, Y., Matsuda, A., Surf. Sci. 210, 114 (1989), J. Perrin, M. Shiritani, P. Kae-Nune, H. Videlot, J. Jolly, J. Guillon, J. Vac. Sci. Technol. A 16, 278 (1998)10.1016/0039-6028(89)90106-4Google Scholar
[4]Sanden, M.C.M. van de, Kessels, W.M.M., Smets, A.H.M., Korevaar, B.A., Severens, R.J. and Schram, D.C., Mat. Res. Soc. Symp. Proc. 557, 13 (1999)Google Scholar
[5]Ley, L., p. 113–138 in Properties of amorphous silicon and its alloys, editor Searle, T., Short Run Press, London (1998)Google Scholar
[6]Vanecek, M., Kocka, J., Stuchlik, J, Kozisek, Z., Stika, O., and Triska, A., Sol. Energy Mat. 8, 411 (1983)Google Scholar
[7]Lee, S., Kumar, S., Wronski, C.R. and Maley, N., J. Non-Cryst. Solids 114, 316 (1989)10.1016/0022-3093(89)90149-XGoogle Scholar
[8]Smith, Z.E., Chu, V., Shepard, K., Aljishi, S., Slobodin, D., Kolodzey, J., and Wagner, S., Appl. Phys. Lett. 50, 1521 (1987)10.1063/1.97819Google Scholar
[9]Leblanc, F., Maeda, Y., Onisawa, K. and Minemura, T., Phys. Rev. B 50, 14613 (1994)10.1103/PhysRevB.50.14613Google Scholar
[10]Yamasaki, S., Mat. Res. Soc. Symp. Proc. 609, A1.1.1 (2000)Google Scholar
[11]O'Keefe, A. and Deacon, D.A.G., Rev. Sci. Instrum. 59, 2544 (1988)Google Scholar
[12]Meijer, G., Boogaarts, M.G.H., Jongma, R.T., Parker, D.H. and Wodtke, A.M., Chem. Phys. Lett. 217, 112 (1994)Google Scholar
[13]Kessels, W.M.M., Smets, A.H.M., Korevaar, B.A., Adriaenssens, G.J., Sanden, M.C.M. van de, and Schram, D.C., Mat. Res. Soc. Symp. Proc. Vol. 557, 25 (1999)10.1557/PROC-557-25Google Scholar
[14]Rodley, D.R.G., Jones, D.I. and Stewart, A.D., Philos. Mag. Lett. 59, 149 (1989)Google Scholar
[15]Globus, T., Ganguly, G. and Cabarrocas, P. Roca i, J. Appl. Phys. 88, 1907 (2000)10.1063/1.1305855Google Scholar
[16]Shimizu, T., Xu, X., Kidoh, H., Morimoto, A., and Kumeda, M., J. Appl. Phys. 64, 5045 (1998)Google Scholar
[17]Smets, A.H.M., Schram, D.C and Sanden, M.C.M. van de, Mat. Res. Soc. Symp. Proc. Vol. 609, A 7.6.1 (2000)10.1557/PROC-609-A7.6Google Scholar
[18]Jackson, W.B. and Amer, N.M., Phys. Rev. B 25, 5559 (1982)Google Scholar
[19]Yamasaki, S., Das, U.K., Umeda, T., Isoya, J. and Tanaka, K., J. of Non-Cryst. Sol. 266–269, 529 (2000)Google Scholar