Hostname: page-component-586b7cd67f-l7hp2 Total loading time: 0 Render date: 2024-11-28T03:55:08.865Z Has data issue: false hasContentIssue false
  • English
  • Français

Evidence of the De-multiplication Interactions Between Threading Dislocations in GaN Films Grown on (0001) Sapphire Substrates

Published online by Cambridge University Press:  01 February 2011

Cheng-Liang Wang  and
Jyh-Rong Gong
Cheng-Liang Wang
Affiliation:
[email protected], National Chung Hsing University, Physics Department, Taichung City, 402, Taiwan
Jyh-Rong Gong
Affiliation:
[email protected], National Chung Hsing University, Department of Physics, Taichung City, 402, Taiwan
Get access

Abstract

We report the observation of threading dislocation de-multiplication process by transmission electron microscopy (TEM). The GaN films used in this study were grown on (0001) sapphire substrates with LT-GaN buffer layers by reduced pressure organometallic vapor phase epitaxy. By using g · Db = 0 invisibility criterion, it was found that some of TDs were de-multiplicated by interactions among themselves. In particular, type a+c TDs were found to nucleate through the interactions between type a and type c TDs in GaN near the GaN/sapphire interface so that the de-multiplication of TDs in GaN films was achieved.

Keywords

transmission electron microscopy (TEM)dislocationsnitride
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 994: Symposium F – Semiconductor Defect Engineering–Materials, Synthetic Structures and Devices II , 2007 , 0994-F03-09
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Wu, X. H., Brown, L. M., Kapolnek, D., Keller, S., Keller, B., DenBaars, S. P. and Speck, J. S., J. Appl. Phys. 80 (1996) 3228.Google Scholar
[2] Gong, J. R., Tseng, S. F., Huang, C. W., Tsai, Y. L., Liao, W. T., Wang, C. L., Shi, B. H. and Lin, T. Y., Jpn. J. Appl. Phys. 42 (2003) 6823.Google Scholar
[3] Hijikuro, M., Kuwano, N., Takeuchi, M., and Aoyagi, Y., Phys. Stat. Sol. (c) 3 (2006) 1832.Google Scholar