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Evidence of the De-multiplication Interactions Between Threading Dislocations in GaN Films Grown on (0001) Sapphire Substrates

Published online by Cambridge University Press:  01 February 2011

Cheng-Liang Wang  and
Jyh-Rong Gong
Cheng-Liang Wang
Affiliation:
[email protected], National Chung Hsing University, Physics Department, Taichung City, 402, Taiwan
Jyh-Rong Gong
Affiliation:
[email protected], National Chung Hsing University, Department of Physics, Taichung City, 402, Taiwan
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Abstract

We report the observation of threading dislocation de-multiplication process by transmission electron microscopy (TEM). The GaN films used in this study were grown on (0001) sapphire substrates with LT-GaN buffer layers by reduced pressure organometallic vapor phase epitaxy. By using g · Db = 0 invisibility criterion, it was found that some of TDs were de-multiplicated by interactions among themselves. In particular, type a+c TDs were found to nucleate through the interactions between type a and type c TDs in GaN near the GaN/sapphire interface so that the de-multiplication of TDs in GaN films was achieved.

Keywords

transmission electron microscopy (TEM)dislocationsnitride
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 994: Symposium F – Semiconductor Defect Engineering–Materials, Synthetic Structures and Devices II , 2007 , 0994-F03-09
Copyright
Copyright © Materials Research Society 2007

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References

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