Hostname: page-component-745bb68f8f-l4dxg Total loading time: 0 Render date: 2025-01-12T09:48:23.536Z Has data issue: false hasContentIssue false
  • English
  • Français

Evidence of Quantum Size Effects in a-Si:H/a-Si1−xCx:H Superlattices

Published online by Cambridge University Press:  26 February 2011

C. E. Nebel ,
F. Kessler ,
G. Bilger ,
G. H. Bauer ,
Y. L. Jiang ,
H. L. Hwang ,
K. C. Hsu  and
C. S. Hong
C. E. Nebel
Affiliation:
Inst. f. Phys. Elektronik, Univers. Stuttgart, Pfaffenwaldring 47, D-7000 Stuttgart-80, F.R.G.
F. Kessler
Affiliation:
Inst. f. Phys. Elektronik, Univers. Stuttgart, Pfaffenwaldring 47, D-7000 Stuttgart-80, F.R.G.
G. Bilger
Affiliation:
Inst. f. Phys. Elektronik, Univers. Stuttgart, Pfaffenwaldring 47, D-7000 Stuttgart-80, F.R.G.
G. H. Bauer
Affiliation:
Inst. f. Phys. Elektronik, Univers. Stuttgart, Pfaffenwaldring 47, D-7000 Stuttgart-80, F.R.G.
Y. L. Jiang
Affiliation:
Dep. of El. Engin., Nat. Tsing Hua Univers., Hsin-Chu, Taiwan, R.O. China.
H. L. Hwang
Affiliation:
Dep. of El. Engin., Nat. Tsing Hua Univers., Hsin-Chu, Taiwan, R.O. China.
K. C. Hsu
Affiliation:
Mat. Res. Lab., Indust. Techn. Res. Inst., Hsin-Chu, Taiwan, R.O. China.
C. S. Hong
Affiliation:
Mat. Res. Lab., Indust. Techn. Res. Inst., Hsin-Chu, Taiwan, R.O. China.
Get access

Abstract

a-Si1−xCx:H superlattice structures were fabricated by photo-CVD and glow discharge deposition. The compositional abruptness of the heterojunction has been confirmed by X-ray diffraction and Auger electron spectroscopy. The optical bandgap of amorphous silicon-based superlattices increases as the well layer thickness decreases. The existence of quantized levels in a-Si:H wells is demonstrated by the observation of resonant tunneling current through the three-barrier two-well structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 118: Symposium E – Amorphous Silicon Technology , 1988 , 361
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Lecomber, P.G., Spear, W.E., Gibson, R.A., J. Non-Cryst. Solids. 77 & 78, 1081 (1985).Google Scholar
2. Itoh, H., Matsubara, S., Maramatsu, S.I., Nakamura, N., Shimada, T., Technical Digest of the International PVSE-3, Tokyo, 37 (1987).Google Scholar
3. Tsuda, S., Tarui, H., Matsuyama, T., Takahama, T., Nakayama, S., Hishikawa, Y., Nakamura, N., Fukatsu, T., Ohnishi, M., Nakano, S., Kawano, Y., Jpn.J.Appl. phys, 26(2), 28(1987).Google Scholar
4. Cheng, R., Wen, S., Feng, J., J. Non-Cryst. Solids 77 & 78, 1061 (1985).Google Scholar
5. Nishikawa, S., Kakinuma, H., Fukuda, H., Watanabe, T., Nihei, K., J. Non-Cryt. Solids, 77 & 78, 1077, (1985).Google Scholar
6. Miyazaki, S., Ihara, Y. and Hirose, M., Extended Abstracts, 18th Conf. on Solid State Dev. and Mater., Tokyo, 675 (1986).Google Scholar