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Evidence of Oscillating Oxide Growth Mechanism during Oxygen Plasma Oxidation of Silicon

Published online by Cambridge University Press:  16 February 2011

Son Nguyen ,
Tue Nguyen ,
D. Dobuzinsky ,
R. Gleason  and
M. Gibson
Son Nguyen
Affiliation:
IBM General Technology Division. Essex Junction, VT 05452 USA
Tue Nguyen
Affiliation:
IBM General Technology Division. Essex Junction, VT 05452 USA
D. Dobuzinsky
Affiliation:
IBM General Technology Division. Essex Junction, VT 05452 USA
R. Gleason
Affiliation:
IBM General Technology Division. Essex Junction, VT 05452 USA
M. Gibson
Affiliation:
IBM General Technology Division. Essex Junction, VT 05452 USA
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Abstract

Evidence of an oscillating thin-film oxide growth reaction was observed on silicon surfaces during low RF power (13.6 MHz, < I W/cm2) plasma oxidation. Ex-situ ellipsometric, X-ray photoelectron (XPS) and Fourier-transform infrared (FTIR) spectroscopic measurements show that the oscillating growth layer is silicon-rich oxide and its oscillating thickness is very sensitive to both surface preparation and plasma oxidation conditions. A simple low-energy oxygen ion-assisted plasma oxidation and sputtering mechanism is proposed to clarify and to account for the observed oscillating oxide growth reaction.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 223: Symposium E – Low Energy Ion Beam and Plasma Modification of Materials , 1991 , 229
Copyright
Copyright © Materials Research Society 1991

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References

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