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Evaluation of the Electromigration Performance of New Aluminium Via Plug-Fill Techniques for 0.25μm and 0.18μm Technologies

Published online by Cambridge University Press:  10 February 2011

S. Foley ,
N. Chan Tung ,
C. Gounelle ,
G. Wyborn ,
S. Louwers  and
A. Mathewson
S. Foley
Affiliation:
National Microelectronics Research Centre, University College – Lee Maltings, Prospect Row, Cork, Ireland. Tel: +353 21 904382Fax: +353 21 270271email: [email protected]
N. Chan Tung
Affiliation:
Centre Commun Philips/CNET/SGS Thomson, 850 rue Jean Monnet, BP16 – 38921, Crolles cedex, France
C. Gounelle
Affiliation:
Centre Commun Philips/CNET/SGS Thomson, 850 rue Jean Monnet, BP16 – 38921, Crolles cedex, France
G. Wyborn
Affiliation:
Centre Commun Philips/CNET/SGS Thomson, 850 rue Jean Monnet, BP16 – 38921, Crolles cedex, France
S. Louwers
Affiliation:
Centre Commun Philips/CNET/SGS Thomson, 850 rue Jean Monnet, BP16 – 38921, Crolles cedex, France
A. Mathewson
Affiliation:
National Microelectronics Research Centre, University College – Lee Maltings, Prospect Row, Cork, Ireland. Tel: +353 21 904382Fax: +353 21 270271email: [email protected]
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Abstract

The electromigration performance of samples fabricated with new Al via-filling techniques are studied and compared. The new techniques are (1) Hot Al mono-chamber and (2) CVD/PVD Al. Their electromigration performances are assessed over a range of stress conditions and compared with that of a standard W- etchback technique.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 516: Symposium E – Low Dielectric Constant Materials IV , January 1998 , 305
Copyright
Copyright © Materials Research Society 1998

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References

[1] Park, C.S., Lee, S.I., Park, J.H., Sohn, J.H., Chin, D. and Lee, J.G., Proc 8th IEEE VMIC Conf., 326 (1991)Google Scholar
[2] Chen, F.S., Liu, Y.S., Dixit, G.A., Sundaresan, R., Wei, C.C. and Liou, F.T., Tech. Dig. IEDM, 51 (1990)Google Scholar
[3] Ionoue, M., Hashizume, K. and Tsuchikawa, H., J. Vac. Sci. Technol., A–6, 1636, (1988)10.1116/1.575298Google Scholar
[4] Lee, Y.H., Wu, K., Mielke, N., Ma, L.J. and Hui, S., Proc. IEEE IRPS Conf., 1997 Google Scholar
[5] Coughlan, J., Foley, S. and Mathewson, A., Proc. ESSDERC Conf., 452, (1997)Google Scholar
[6] Chang, C.Y. and Sze, S.M., in ULSI Technology, (McGraw Hill publishers New York 1996) pp. 412 Google Scholar
[7] Kahn, H., Thompson, C.V. and Cooperman, S.S., Proc. Mat. Res. Soc. Symp., Vol. 265, (1992)10.1557/PROC-265-65Google Scholar
[8] Maiz, J.A. and Sabi, B., Proc. IEEE IRPS Conf., 145, (1987)Google Scholar