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Evaluation of Residual Stresses in Thin Films by Means of Micro-Raman Spectroscopy
Published online by Cambridge University Press: 10 February 2011
Abstract
The effects of temperatures on the stress evaluation of boron doped silicon in solid and film forms are investigated. Several techniques, such as fluid cooling to eliminate the temperature raise and/or simultaneous observation of Stokes and anti Stokes peaks to compensate the temperature effects, are applied. The advantages and disadvantages of each method and the abilities and limits of these techniques are discussed.
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- Research Article
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- Copyright © Materials Research Society 1998
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