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Evaluation of Residual Stresses in Thin Films by Means of Micro-Raman Spectroscopy

Published online by Cambridge University Press:  10 February 2011

Kazuyuki Mizuhara ,
Shinichi Takahashi ,
Jyunichi Kurokawa ,
Noboru Morita  and
Yoshitaro Yoshida
Kazuyuki Mizuhara
Affiliation:
Mechanical Engineering Laboratory, Tsukuba, 305 JAPAN, [email protected]
Shinichi Takahashi
Affiliation:
Nikon Corp., Tsukuba Research Lab., Tsukuba, 305 JAPAN, [email protected]
Jyunichi Kurokawa
Affiliation:
Chiba Univ., Chiba, 263 JAPAN
Noboru Morita
Affiliation:
Chiba Univ., Chiba, 263 JAPAN
Yoshitaro Yoshida
Affiliation:
Chiba Univ., Chiba, 263 JAPAN
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Abstract

The effects of temperatures on the stress evaluation of boron doped silicon in solid and film forms are investigated. Several techniques, such as fluid cooling to eliminate the temperature raise and/or simultaneous observation of Stokes and anti Stokes peaks to compensate the temperature effects, are applied. The advantages and disadvantages of each method and the abilities and limits of these techniques are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 505 , 1997 , 501
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

1)Sparks, R. G. and Paesler, M. A., ”Micro-Raman analysis of stress in machined silicon and germanium,” Precision Engng., 10, 4, 191 (1988)Google Scholar
2)Kobayashi, H., Mizuhara, K., Morita, N. and Yoshida, Y., “Direct measurement of Residual Stress in Machined Silicon Using micro-Raman Spectroscopy,” J. of Japan Soc. of Grinding Engineers, 38, 37 (1994).Google Scholar
3)Hart, T. R., Aggarwal, R. L. and Lax, B., “Temperature Dependence of Raman Scattering in Silicon,” Prys. Rev. B, 1, p. 638 (1970)Google Scholar
4)Schlotter, N. E., Schaertel, S. A., Kelty, S. P. and Howard, R., ″Low-Signal-Level Raman Spectroscopy with an Intensified Optical Multichannel Array Detector,″ Appl. Spectro., 42, 5, 746 (1988)Google Scholar