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Evaluation of Pb Precursors for Liquid Injection Atomic Layer Deposition of Pb(ZrxTi1-x)O3 Thin Films

Published online by Cambridge University Press:  26 February 2011

Takayuki Watanabe ,
Susanne Hoffmann-Eifert ,
Cheol Seong Hwang  and
Rainer Waser
Takayuki Watanabe
Affiliation:
[email protected], Research Center Juelich, Leo-Brandt-Str., Juelich, NRW, 52425, Germany
Susanne Hoffmann-Eifert
Affiliation:
[email protected], Research Center Juelich, Germany
Cheol Seong Hwang
Affiliation:
[email protected], Seoul National University, Korea, Republic of
Rainer Waser
Affiliation:
[email protected], Research Center Juelich, Germany
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Abstract

Pb(DPM)2 and Pb(TMOD)2 dissolved in ethylcyclohexane were evaluated as precursors for future atomic layer deposition (ALD) of Pb(Zr,Ti)O3 films. PbO films were deposited by a liquid injection atomic layer deposition on Pt-covered Si substrates at different deposition temperature and precursor volume per cycle. Pb(DPM)2 and Pb(TMOD)2 started thermal decomposition at deposition temperature of around 270°C and 320°C, respectively. Against increasing Pb(DPM)2 injection at 240°C, the deposition rate of PbO films saturated at around 1 Å/cycle, but kept increasing at 300°C, which is above the thermal decomposition temperature. The deposition rate of PbO films at 240°C dropped to a constant value with enough purge time after precursor injection and reactant supply. A saturated deposition rate of PbO films was also observed for Pb(TMOD)2 below the thermal decomposition temperature. However, the saturation behavior observed for Pb(TMOD)2 was slower and the saturated growth rate was higher comparing to Pb(DPM)2. In addition, the film thickness of the PbO films had an apparent gradient over the substrates. These results indicate that Pb(DPM)2 shows more reactive and stable chemisorption comparing to Pb(TMOD)2 for the self-limiting growth rate.

Keywords

atomic layer depositionferroelectricfilm
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 902: Symposium T – Ferroelectric Thin Films XIII , 2005 , 0902-T04-07
Copyright
Copyright © Materials Research Society 2006

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