Hostname: page-component-745bb68f8f-lrblm Total loading time: 0 Render date: 2025-02-04T17:59:09.780Z Has data issue: false hasContentIssue false
  • English
  • Français

Evaluation of Lamp Zone-Melting Recrystallization

Published online by Cambridge University Press:  28 February 2011

P.W. Mertens ,
D.J. Wouters ,
K.J. Yallup  and
H.E. Maes
P.W. Mertens
Affiliation:
Interuniversitair Micro-Electronica Centrum, Kapeldreef 75, B-3030 Leuven Belgium
D.J. Wouters
Affiliation:
Interuniversitair Micro-Electronica Centrum, Kapeldreef 75, B-3030 Leuven Belgium
K.J. Yallup
Affiliation:
Interuniversitair Micro-Electronica Centrum, Kapeldreef 75, B-3030 Leuven Belgium
H.E. Maes
Affiliation:
Interuniversitair Micro-Electronica Centrum, Kapeldreef 75, B-3030 Leuven Belgium
Get access

Abstract

The intensity profiles of various kinds of topheaters are compared and discussed. Using the mercury-arc lamp heater experiments on polycrystalline silicon layers of thicknesses varying from 1 to 10 urn were performed. The 10 fiva layers were polished prior to recrystallization. After zone melting recrystallization they showed a strong (100) texture combined with an alignment of the [010] direction with the scan direction. By patterning 1 ¼m poly-silicon films into isolated narrow silicon stripes, the kinetic mechanism that is shown to be responsible for the alignment of the [010] direction along the scan direction could be inhibited. In this way other mechanisms that influence the orientation could be studied. Finally some electrical characteristics are presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 107: Symposium H – Silicon-on-Insulator and Buried Metals in Semiconductors , 1987 , 221
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Gibson, J.M., Pfeiffer, L.N., West, K.W. and Joy, D.C., in Seiniconductor-on-Insulator Thin Film Transistor Technology, edited by Chiang, A., Geis, M.W. and Pfeiffer, L. (Mater. Res. Soc. Symp. Proc. 53, Pittsburgh, 1986) p. 289.Google Scholar
2 Pfeiffer, L., German, A.E., Jackson, K.A. and West, K.W. in Beam-Solid Interactions and Transient Processes edited by Thompson, M.O., Picraux, S.T. and Williams, J.S. (Mater. Res. Soc. Symp. Proc. 74, Pittsburgh, 1987) p. 543.Google Scholar
3 Mertens, P.W., Wouters, D.J. and Maes, H.E. accepted for publication in J. Appl. Phys.Google Scholar
4 Elenbaas, W. Light Sources (MacMillan, London, 1972) p. 134.Google Scholar
5 Chen, O.K., Geis, M.W., Tsaur, B-Y., Champan, R.L. and Fan, J.C.C. J. Electrochem. Soc. 131, 1707 (1984).Google Scholar
6 Grigoropoulos, C.P., Buckholz, R.H. and Domoto, G.A. J. Appl. Phys. 59, 454 (1986).Google Scholar
7 Drowley, C.I., Zorabedian, P. and Kamins, T.I. in Energy Beam-Solid Interactions and Transient Thermal Processing edited by Fan, J.C.C. and Johnson, N.M. (Mat. Res. Soc. Symp. Proc. 23, Elsevier, New York 1984) p. 465.Google Scholar
8 Sugahara, K., Kusunoki, S., Inoue, Y., Nishimura, T. and Akasaka, Y. in Ext. Abstrs. 18th Conf. on Solid State Dev. and Mat., Tokyo (1986) p. 565.Google Scholar
9 Geis, M.W., Smith, H.I., Tsaur, B-Y., Fan, J.C.C., Silversmith, D.J. and Mountain, R.W., J. Electrochem. Soc. 129, 2812 (1982).Google Scholar
10 Pfeiffer, L.N., Paine, S., Gilmer, G.H., van Saarloos, W. and West, K.W., Phys. Rev. Lett. 54, 1944 (1985).CrossRefGoogle Scholar
11 Pfeiffer, L., Celler, G.K., Kovacs, T. and Robinson, McD., App. Phys. Lett. 43, 1048 (1983).CrossRefGoogle Scholar
12 Yallup, K.J., Mertens, P.W., Dupas, L., De Meyer, K. and Maes, H.E. to be presented at the 1988 European Silicon On Insulator Workshop, Meylan France.Google Scholar