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Evaluation of AlGaAs/GaAs Heterointerface by Shubnikov-de Haas Oscillation Measurements

Published online by Cambridge University Press:  26 February 2011

Kazumi Kasai ,
H. Tanaka ,
H. Itoh ,
T. Oh-Hori ,
M. Takikawa  and
J. Komeno
Kazumi Kasai
Affiliation:
Fujitsu Laboratories, 10–1 Morinosato-Wakamiya, Atsugi 243–1, Japan
H. Tanaka
Affiliation:
Fujitsu Laboratories, 10–1 Morinosato-Wakamiya, Atsugi 243–1, Japan
H. Itoh
Affiliation:
Fujitsu Laboratories, 10–1 Morinosato-Wakamiya, Atsugi 243–1, Japan
T. Oh-Hori
Affiliation:
Fujitsu Laboratories, 10–1 Morinosato-Wakamiya, Atsugi 243–1, Japan
M. Takikawa
Affiliation:
Fujitsu Laboratories, 10–1 Morinosato-Wakamiya, Atsugi 243–1, Japan
J. Komeno
Affiliation:
Fujitsu Laboratories, 10–1 Morinosato-Wakamiya, Atsugi 243–1, Japan
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Abstract

The measurement of Shubnikov-de Haas(SdH) oscillation is proposed as a new technique for evaluating the quality of a heterointerface. The first excited state of 2-dimensional electron energy levels is determined for several samples using the measurements of SdH oscillation. Lower values of the first excited state energy are found for the samples with a low mobility. The low value can be approximately explained in terms of graded interface model.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 77: Symposium D – Interfaces, Superlattices, and Thin Films , 1986 , 479
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

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