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Etching and Surface Smoothing with Gas-Cluster Ion Beams

Published online by Cambridge University Press:  10 February 2011

D. B. Fenner ,
R. P. Torti ,
L. P. Allen ,
N. Toyoda ,
A. R. Kirkpatrick ,
J. A. Greer ,
V. Difilippo  and
J. Hautala
D. B. Fenner
Affiliation:
Epion Corporation, Billerica Massachusetts [email protected]
R. P. Torti
Affiliation:
Epion Corporation, Billerica Massachusetts
L. P. Allen
Affiliation:
Epion Corporation, Billerica Massachusetts
N. Toyoda
Affiliation:
Department of Materials Science & Engineering, Massachusetts Institute of Technology
A. R. Kirkpatrick
Affiliation:
Epion Corporation, Billerica Massachusetts
J. A. Greer
Affiliation:
Epion Corporation, Billerica Massachusetts
V. Difilippo
Affiliation:
Department of Mechanical Engineering, Tufts University
J. Hautala
Affiliation:
Epion Corporation, Billerica Massachusetts
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Abstract

Surface processing of microelectronic materials by bombardment with nanoparticles of condensed gases (i.e., clusters) in the form of an ion beam, makes possible etching and smoothing of those surfaces to very high figures of merit. As this is not possible with any conventional ion method, gas-cluster ion-beam systems have great potential in manufacturing. The formation of gas clusters and their collision with surfaces provides an interesting arena for novel physics and surface science. This paper outlines a physical model for the clusters and surface interactions, and provides examples of surface processing. In particular, the reduction of surface roughness while etching by cluster-ion bombardment is illustrated for various materials utilized in microelectronics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 585: Symposium L – Fundamental Mechanisms of Low-Energy-Beam Modified Surface , 1999 , 27
Copyright
Copyright © Materials Research Society 2000

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