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Esca Studies of the Valence band and Loss Spectra of Semiconductor Films: Ionicity and Chemical Bonding

Published online by Cambridge University Press:  22 February 2011

T. L. Barr ,
B. Kramer ,
S. I. Shah ,
M. Ray  and
E. Greene
T. L. Barr
Affiliation:
Signal Research Center Inc., Des Plaines, IL
B. Kramer
Affiliation:
Coordinated Science Laboratory, University of Illinois, Urbanaz, IL
S. I. Shah
Affiliation:
Coordinated Science Laboratory, University of Illinois, Urbanaz, IL
E. Greene
Affiliation:
Coordinated Science Laboratory, University of Illinois, Urbanaz, IL
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Abstract

ESCA valence band and core level loss results have been determined that appear to be directly related to the degree of covalency/ionicity and other bonding features of certain semi-conductor systems. Specific applications are presented that aid in the characterization of the key chemistry of dielectric oxide/semiconductor interfaces and also may help to determine the relative metastability of the solid solution of Group IV elements (e.g., Ge) into certain III-V lattices (e.g., GaAs). It is shown that these features are not detectable through conventional core level shift arguments, and that the aforementioned novel approaches often require high resolution ESCA.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 47: Symposium C – Thin Films: The Relationship of Structure to Properties , 1985 , 205
Copyright
Copyright © Materials Research Society 1985

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References

REFERENCES

1. See, for example, Greene, J. E., Barnett, S. A., Cadien, K. C., and Ray, M.A., J. Crystal Growth, 56, 389 (1982).Google Scholar
2. See, for example, Greene, J. E. and Barnett, S. A., J. Vac. Sci. and Technol., 21, 285 (1982); J. E. Greene, J. Vac. Sci. and Technol., B1, 229 (1983).Google Scholar
3. a) Barnett, S. A., Ray, M. A., Lastras, A., Kramer, B., Greene, J. E., Raccah, P. M. and Abels, L. L., Electronics Lett., 18, 891 (1982); b) K. E. Newman, A. Lastras-Martinez, B. Kramer, S. A. Ba-rnett, M. A. Ray, J. D. Dow, J. E. Greene and P. M. Raccah, Phys. Rev. Lett., 50, 1466 (1983).Google Scholar
4. Eltoukhy, A. H., Natarajan, B. R., Greene, J. E. and Barr, T. L., Thin Solid Films, 69, 201, 213, 229 (1980).Google Scholar
5. Barr, T. L., Applications of Surface Sci., 15, 1 (1983).CrossRefGoogle Scholar
6. Barr, T. L., in Practical Surface Analysis, ed. Briggs, D. and Seah, M. P., (J. Wiley and Sons, New York, 1983), pps. 283–358.Google Scholar
7. Barr, T. L., presented in part at PAC CHEM, Honolulu, 1984, to be published.Google Scholar
8. Kao, C. C., presented at TRISA-85, Oconomowoc, Wis., 1985, Kao, C. C. and Barr, T. L., to be published.Google Scholar
9. See, for example, Grunthaner, F. J., Grunthaner, P. J., Vasquez, R. P., Lewis, B. F., Masejian, J. and Madhukar, A., J. Vac. Sci. and Technol., 16, 1443 (1979) and C. W. Wilmsen, J. Vac. Sci. and Technol., 19, 279 F7981).CrossRefGoogle Scholar
10. Barr, T. L., “XPS Studies of Semiconductors: Oxidation, Layering and Interfaces,” 11th Annual Symposium Applied Vacuum Sci. and Technol., Tampa, Fla., 1982, to be published.Google Scholar
11. See, for example, Swift, P., Surf. and Interfacial Anal., 4, 476 (1982).Google Scholar
12. Kowalczyk, S. P., McFeely, F. R., Ley, L., Pollack, R. A. and Shirley, D. A., Phys. Rev. B9, 600, 3573 (1974).Google Scholar
13. Barr, T. L., presented at the Intern. Vac. Congress, Madrid, 1983, unpublished.Google Scholar
14. Kowalczyk, S. P., Ley, L., McFeely, F. R. and Shirley, D. A., J. Chem. Phys., 61, 2850 (1974).Google Scholar
15. Ley, L. in Photoemission in Solids, Cardona, M. and Ley, L. eds. Springer-Verlog, Berlin, 1978, Ch. 1.Google Scholar
16. See, for example, Eastman, D. E., Grobrnan, W. D., Freeouf, J. L. and Erbudak, M., Phys. Rev., B 9, 3473 (1974).Google Scholar
17. Barr, T. L., Greene, J. E. and Eltoukly, A. H., J. Vac. Sci. and Technol., 16, 517 (1979), T. L. Barr, J. E. Greene, A. H. Eltoukhy and B. R. Nataragan, to be published.Google Scholar
18. Barr, T. L., presented in part at the Gordon Conference on Electronn Spectroscopy, Wolfsboro, N.H., 1984, to be published.Google Scholar
19. See, for example, Pollack, R. A., Ley, L., Kowalcyzk, S. P., Shirley, D. A., Joannopoulos, J. D., Chadi, D. J. and Cohen, M. L., Phys. Rev. Lett., 29, (1103) 1972; and the PhD Dissertations of R. A. Pollack (1972) and S. P. Kowalczyk (1973), U. California Berkley.Google Scholar
20. See, for example, Stukel, D. J., Euwena, R. N., Collins, T. C., Herman, F., and Kortum, R. L., Phys. Rev., 179, 740 (1969).CrossRefGoogle Scholar
21. Levin, A. A., Solid State Quantum Chemistry, McGraw-Hill International Book Co., New York, 1977.Google Scholar
22. Barr, T. L., Kramer, B., Greene, J. E., to be published.Google Scholar
23. See, for example, Phillips, J. C., Rev. Mod. Phys. 42, 317 (1970).CrossRefGoogle Scholar
24. (a) Walter, J. P. and Cohen, M. L., Phys. Rev., B4, 1877 (1971). (b) J. R. Chelikowsky and M. L. Cohen, Phys. Rev. B14, 556 (1976).CrossRefGoogle Scholar
25. Onodera, Y. and Toyozawa, Y., J. Phys. Soc. Jap., 24, 341 (1968).Google Scholar
26. Newman, K. E. and Dow, J. D., Phys. Rev. B 27, 7495 (1983).CrossRefGoogle Scholar
27. Barr, T. L., Barnett, S. A., and Greene, J. E.,. to be published.Google Scholar
28. Ley, L., Kowalczyk, S. P., Pollack, R. A., and Shirley, D. A., Phys. Rev. Lett., 28, 1088 (1972).Google Scholar
29. Barr, T. L., presented in part at the Inst. of Phys., U. Uppsala, Sweden, 1983, to be published.Google Scholar
30. See, for example, Pines, D., Rev. Mod. Phys. 28, 184 (1956) and P. Nozieres and D. Pines, Phys. Rev., 109, 741(1958).CrossRefGoogle Scholar
31. Nozieres, P. and Pines, D., Phys. Rev., 109, 1062 (1958).CrossRefGoogle Scholar
32. Barr, T. L., to be published.Google Scholar
33. Gadzuk, J. W. and Sunjic, M., Phys. Rev., B 12, 524 (1975).CrossRefGoogle Scholar
34. Manne, R. and Aberg, T., Chem. Phys. Lett, 7, 282 (1970).Google Scholar
35. Geliuos, U., Asplund, L., Basilier, E., Hedman, S., Helenelund, K. and Siegbahn, K., Nuclear Inst. and Methods in Phys. Res., B1, 85 (1984).CrossRefGoogle Scholar
36. See, for example, Sǔnjić, M. and Sǒkcević, D., J. Electron Spectros. and Related Phenomena, 5, 963 (1974); W. J. Pardee, G. D. Mahan, D. E. Eastman, R. A. Pollack, L. Ley, F. R. McFeely, S. P. Kowalczyk and D. A. Shirley, Phys. Rev., Bll, 3614 (1975); and M. Sǔnjić and D. Sǒkcević, Solid State Comm., 18, 373 (1976).Google Scholar
37. Fadley, C. S., J. Electron Spectrosc. and Related Phenomena, 5, 895 (1974).Google Scholar
38. Pollak, R. A., Ley, L., McFeely, F. R., Kowalczyk, S. P. and Shirley, D. A., J. Electron Spectrosc. and Related Phenomena, 3, 381 (1974).CrossRefGoogle Scholar
39. Kittel, C., Quantum Theory of Solids, John Wiley and Sons, New York, 1963, Ch. 6.Google Scholar
40. See, for example, Mott, N. F., Phil. Mag., 6, 287 (1961). Also see, C. Kittel, Intro. to Solid State Physics, John Wiley and Sons, New York, 4th Ed., 1971, Appendix, Advanced Topic H.CrossRefGoogle Scholar
41. See, for example, Gheorghiu, A., Rappenau, T., Dupin, J. P. and Thaye, M. L., J. de Physique, C4, 881 (1981).Google Scholar
42. Holloway, and Davis, , Phys. Rev. Lett., 53, 830 (1984).CrossRefGoogle Scholar