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Erbium-doped GaN epilayers synthesized by metal-organic chemical vapor deposition

Published online by Cambridge University Press:  01 February 2011

C. Ugolini ,
N. Nepal ,
J. Y. Lin ,
H. X. Jiang  and
J. M. Zavada
C. Ugolini
Affiliation:
[email protected], Kansas State University, Physics, Cardwell Hall, Room 319, Manhattan, KS, 66506, United States
N. Nepal
Affiliation:
[email protected], Kansas State University, Department of Physics, Manhattan, KS, 66506, United States
J. Y. Lin
Affiliation:
[email protected], Kansas State University, Department of Physics, Manhattan, KS, 66506, United States
H. X. Jiang
Affiliation:
[email protected], Kansas State University, Department of Physics, Manhattan, KS, 66506, United States
J. M. Zavada
Affiliation:
[email protected], U.S. Army Research Office, Durham, NC, 27709, United States
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Abstract

GaN is an excellent host for Er due to the low thermal quenching of radiative intra-4f Er3+ transitions at 1.54 μm. Er doped GaN structures are promising for emitters and amplifiers operating at the main telecommunication wavelength. In recent studies, Er doped III-Nitride epilayers were obtained by ion implantation, hydride vapor phase epitaxy (HVPE), metal organic molecular beam epitaxy (MOMBE), or molecular beam epitaxy (MBE). But, in-situ Er doping of III-nitride epilayers has not been achieved by metal organic chemical vapor deposition (MOCVD), mostly due to the low vapor pressure and lack of suitable, metal organic Er sources. Since n and p type III-nitride epilayers with excellent electrical properties and high crystalline quality are easily achieved by the MOCVD method, in-situ incorporation of Er into III-nitride materials by MOCVD is a very attractive method for creating highly efficient optoelectronic devices operating at 1.54 μm. We report on the experimental study and synthesis of Er doped GaN by MOCVD. Photoluminescence (PL) with above and below bandgap excitation energies were employed to study the optical properties of Er doped GaN. PL spectra of these Er doped layers exhibit a strong 1.54 μm emission, corresponding to the intra-4f transition of the 4I13/2 (first excited state) to the 4I15.2 (ground state) of Er3+. The mechanisms of optical transitions involving different excitation energies, and potential applications of Er doped GaN structures in the communication wavelength are also discussed.

Keywords

nitrideEroptical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 955: Symposium I – Advances in III-V Nitride Semiconductor Materials and Devices , 2006 , 0955-I10-05
Copyright
Copyright © Materials Research Society 2007

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