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Equilibrium Crystal Shape of Silicon Near (001)

Published online by Cambridge University Press:  25 February 2011

J. Tersoff  and
E. Pehlke
J. Tersoff
Affiliation:
EBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598
E. Pehlke
Affiliation:
Fritz-Haber-Institut, Faradayweg 4–6, D-1000 Berlin 33, Federal Republic of Germany.
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Extract

We have calculated the equilibrium shape of a silicon crystal at orientations near (001), both at T=0 and at elevated temperature [1], using methods developed previously to study stepped surfaces [2,3,4]. Comparison with recent experiments shows that several topographic features observed on Si direcdy reflect the equilibrium shape. In particular, our results resolve an apparent discrepancy between theory and experiment, regarding facetting between regions of single-layer and double-layer steps. In addition, the calculated crystal shape suggests an explanation for observed low-angle facetting on very flat (001) surfaces.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 280: Symposium B – Evolution of Surface and Thin Film Microstructure , 1992 , 375
Copyright
Copyright © Materials Research Society 1993

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References

1. Tersoff, J. and Pehlke, E., Phys. Rev. B (in press).Google Scholar
2. Pehlke, E. and Tersoff, J., Phys. Rev. Lett. 67, 465 (1991); and Phys. Rev. Lett. 67, 1290 (1991).Google Scholar
3. Tersoff, J. and Pehlce, E., Phys. Rev. Lett. 68, 816 (1992).Google Scholar
4. Alerhand, O. L., Berker, A. N., Joannopoulos, J. D., Vanderbilt, D., Hamers, R. J. and Demuth, J. E., Phys. Rev. Lett. 64, 2406 (1990);Google Scholar
Alerhand, O. L., Vanderbilt, D., Meade, R. D. and Joannopoulos, J. D., Phys. Rev. Lett. 61, 1973 (1988).Google Scholar