Published online by Cambridge University Press: 26 February 2011
Epitaxial films of ferromagnetic τMnAl with perpendicular magnetization have been grown on {100}AlAs/GaAs substrates by molecular beam epitaxy. A multistep growth procedure involving the formation of a template followed by codeposition and subsequent annealing yields thin epitaxial τMnA1 films that exhibit the extraordinary Hall effect with nearly ideal hysteretic characteristics.