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Epitaxial τMnAl/AlAs/GaAs Heterostructures with Perpendicular Magnetization
Published online by Cambridge University Press: 26 February 2011
Abstract
Epitaxial films of ferromagnetic τMnAl with perpendicular magnetization have been grown on {100}AlAs/GaAs substrates by molecular beam epitaxy. A multistep growth procedure involving the formation of a template followed by codeposition and subsequent annealing yields thin epitaxial τMnA1 films that exhibit the extraordinary Hall effect with nearly ideal hysteretic characteristics.
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- Copyright © Materials Research Society 1992
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