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Epitaxial La0.67(Sr,Ca)0.33MnO3 Films on Si for IR Bolometer Applications

Published online by Cambridge University Press:  17 March 2011

A.M. Grishin ,
S.I. Khartsev ,
J.-H. Kim  and
Jun Lu
A.M. Grishin
Affiliation:
Department of Condensed Matter Physics, Royal Institute of Technology, SE-164 40 Stockholm-Kista, SWEDEN
S.I. Khartsev
Affiliation:
Department of Condensed Matter Physics, Royal Institute of Technology, SE-164 40 Stockholm-Kista, SWEDEN
J.-H. Kim
Affiliation:
Department of Condensed Matter Physics, Royal Institute of Technology, SE-164 40 Stockholm-Kista, SWEDEN
Jun Lu
Affiliation:
Ångström Microstructure Laboratory, Uppsala University, SE-751 21 Uppsala, SWEDEN
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Abstract

We report on processing and properties of La0.67(Sr,Ca)0.33MnO3(LSCMO) films grown by pulsed laser deposition technique on Si(001) substrates buffered with Bi4Ti3O12/CeO2/YSZ heteroepitaxial layers. X-ray diffraction shows cube-on-cube growth of epitaxial Bi4Ti3O12/CeO2/YSZ/Si heterostructure whereas the LSCMO layer grows in the “diagonal-on-side” manner onto the Bi4Ti3O12 (BTO) template. High resolution TEM images demonstrate sharp interfaces between the buffer layers and LSCMO film as well as rare misfit dislocations on the CeO2/YSZ interface. LSCMO film processing conditions have been optimized to get maximum temperature coefficient of resistivity TCR = 4.4%K-1 and colossal magnetoresistance(CMR) ‘Delta;ρ/ρ ∼ 2.9%kOe-1 @ 294K. Almost ultimate CMR performance at room temperature has been achieved due to successive improvement of c-axisorientation of layers: full widths at half-maximum (FWHM) 0.65, 0.58, 0.65, 1.13 and 0.18 degrees in LSCMO/BTO/CeO2/YSZ/Si stack, respectively. Characterization of electrical noise in CMR film yields noise equivalent temperature difference (NETD) as low as 1.2 ‘mu;K/√Hz @ 30Hz and 294K.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 811: Symposia D/E – Integration of Advanced Micro-and Nanelectronic Devices-Critical Issues and Solutions , 2004 , E.3.2
Copyright
Copyright © Materials Research Society 2004

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References

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