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Epitaxial Growth of ZnO Thin Films on SiC Prepared by Chemical Solution Deposition

Published online by Cambridge University Press:  01 February 2011

Young-Sik Park ,
Young-Sun Jeon ,
Kyung-Ok Jeon ,
Bo-An Kang ,
Kyu-Seog Hwang ,
Ju-Hyun Jeong  and
Young-Hwan Lee
Young-Sik Park
Affiliation:
[email protected], Korea Photonics Technology Institute, Camera Module Team, Gwangju 500-460, Korea, Republic of
Young-Sun Jeon
Affiliation:
[email protected], Korea Photonics Technology Institute, Camera Module Team, Gwangju, 500-460, Korea, Republic of
Kyung-Ok Jeon
Affiliation:
[email protected], Korea Photonics Technology Institute, Camera Module Team, Gwangju, 500-460, Korea, Republic of
Bo-An Kang
Affiliation:
[email protected], Nambu University, Department of Applied Optics, 864-1 Wolgye-dong Gwangsan-gu, Gwangju, 506-824, Korea, Republic of
Kyu-Seog Hwang
Affiliation:
[email protected], Nambu University, Department of Applied Optics, 864-1 Wolgye-dong Gwangsan-gu, Gwangju, 506-824, Korea, Republic of
Ju-Hyun Jeong
Affiliation:
[email protected], Konyang University, Department of Ophthalmic Optics, Daejeon, 302-718, Korea, Republic of
Young-Hwan Lee
Affiliation:
[email protected], Chunnam Techno College, Department of Automobile, Chonnam, 516-911, Korea, Republic of
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Abstract

Zinc oxide (ZnO) thin films have emerged as one of the most promising oxide materials owing to their optical and electrical properties, together with their high chemical and mechanical stability. Chemical solution deposition (CSD) is attractive technique for obtaining ZnO thin films and has the advantages of easy control of the film composition and easy fabrication of a larger-area thin film at low cost. In this work, epitaxial ZnO thin films on SiC substrate were prepared by using a CSD method with a zinc naphthenate precursor. Precursor films were pyrolyzed at 500°C for 10 min in air and finally annealed at 600°C, 700°C, 800°C and 900°C for 30 min in air. Crystallinity and in-plane alignment of the films were investigated by X-ray diffraction theta-2 theta scan and pole-figure analysis. Scanning electron microscope, scanning probe microscope, and He-Cd laser (325 nm) are used to detect the surface morphology and photoluminescence of the films. The effects of annealing temperature on crystallinity and epitaxy of the films will be fully discussed on the basis of the results of X-ray diffraction analysis.

Keywords

sol-gelepitaxyluminescence
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 957: Symposium K – Zinc Oxide and Related Materials , 2006 , 0957-K10-14
Copyright
Copyright © Materials Research Society 2007

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References

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