Hostname: page-component-586b7cd67f-2brh9 Total loading time: 0 Render date: 2024-11-28T12:31:28.676Z Has data issue: false hasContentIssue false
  • English
  • Français

Epitaxial Growth of (Na,K)NbO3 Films by Pulsed Laser Deposition

Published online by Cambridge University Press:  20 March 2013

K. Sakurai ,
T. Hanawa ,
N. Kikuchi ,
K. Nishio ,
K. Tonooka ,
R. Wang ,
H. Bando  and
H. Takashima
K. Sakurai
Affiliation:
National Institute of Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba-shi, Ibaraki 305-8568, JAPAN Department of Materials Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda-shi, Chiba 278-8510, JAPAN
T. Hanawa
Affiliation:
National Institute of Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba-shi, Ibaraki 305-8568, JAPAN Department of Materials Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda-shi, Chiba 278-8510, JAPAN
N. Kikuchi
Affiliation:
National Institute of Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba-shi, Ibaraki 305-8568, JAPAN Department of Materials Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda-shi, Chiba 278-8510, JAPAN
K. Nishio
Affiliation:
Department of Materials Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda-shi, Chiba 278-8510, JAPAN
K. Tonooka
Affiliation:
National Institute of Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba-shi, Ibaraki 305-8568, JAPAN
R. Wang
Affiliation:
National Institute of Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba-shi, Ibaraki 305-8568, JAPAN
H. Bando
Affiliation:
National Institute of Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba-shi, Ibaraki 305-8568, JAPAN
H. Takashima
Affiliation:
National Institute of Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba-shi, Ibaraki 305-8568, JAPAN
Get access

Abstract

(Na,K)NbO3 is a promising candidate for lead-free piezoelectric materials. (Na1-xKx)NbO3 films (x = 0.3–0.7) were epitaxially grown on a (100)SrTiO3 substrate via pulsed laser deposition. The effects of substrate temperature and oxygen pressure during deposition on the crystallinity of the films were examined: both parameters affected the mosaic spread of the crystallites and the formation of an impurity phase. In this study, the optimum conditions for the preparation of highly crystalline films were a substrate temperature of 800 °C and oxygen pressure of ∼60 Pa. The lattice constants parallel and perpendicular to the substrate surface responded differently to changes in x: the constant parallel to the surface increased with increasing x, while the constant perpendicular to the surface was maximized at x = 0.5. The difference in the dependence of the lattice constants could be explained by the elastic distortion of the lattice.

Keywords

laser ablationepitaxypiezoelectric
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1494: Symposium Z – Oxide Semiconductors and Thin Films , 2013 , pp. 227 - 232
Copyright
Copyright © Materials Research Society 2013 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Poulin, G., Sarraute, E. and Costa, F., Sensors and Actuators A 116, 461 (2004)CrossRefGoogle Scholar
Beeby, S. P., Tudor, M. J. and White, N. M., Meas. Sci. Technol. 17, R175 (2006)CrossRefGoogle Scholar
“Adaptation to scientific and technical progress of Annex II to Directive 200/53/EC (ELV) and of the Annex to Directive 2002/95/EC (RoHS) Final Report”, Öko-Institute e.V.-Institute for Applied Ecology, Germany Google Scholar
Saito, T., Wada, T., Adachi, H. and Kanno, I., Jpn. J. Appl. Phys. 43, 6627 (2004)CrossRefGoogle Scholar
Nakashima, Y., Sakamoto, W., Maiwa, H., Shimura, T. and Yogo, T., Jpn. J. Appl. Phys. 46, L311 (2004)CrossRefGoogle Scholar
Saito, Y., Takao, H., Tani, T., Nonoyama, T., Takatori, K., Homma, T., Nagaya, T. and Nakamura, M., Nature 432, 84 (2004)CrossRefGoogle Scholar
Wang, R., Bando, H. and Itoh, M., IMF-ISAF 2009 Conf. Xi’an, DO-033, (2009)Google Scholar
Shibata, K., Suenaga, K., Nomoto, A. and Mishima, T., Jpn. J. Appl. Phys. 48, 121408 (2009)CrossRefGoogle Scholar
Wakasa, Y., Kanno, I., Yokokawa, R., Kotera, H., Shibata, K. and Mishima, T., Sensors and Actuators A 171, 223 (2011)CrossRefGoogle Scholar
Saito, T., Adachi, H., Wada, T. and Adachi, H., Jpn. J. Appl. Phys. 44, 6969 (2005)CrossRefGoogle Scholar
Egerton, L. and Dillon, D. M., J. Am. Ceram. Soc. 42, 438 (1959)CrossRefGoogle Scholar