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Epitaxial growth of Matched Metallic ErP0.6 As0.4 layers on GaAs

Published online by Cambridge University Press:  28 February 2011

A. Guivarc'h ,
A. Le Corre ,
J. Caulet ,
B. Guenais ,
M. Minier ,
G. Ropars ,
P.A. Badoz  and
J.Y. Duboz
A. Guivarc'h
Affiliation:
Centre National d’Etudes des Télécommunications LAB/OCM BP 40 - 22301 LANNION (FRANCE)
A. Le Corre
Affiliation:
Centre National d’Etudes des Télécommunications LAB/OCM BP 40 - 22301 LANNION (FRANCE)
J. Caulet
Affiliation:
Centre National d’Etudes des Télécommunications LAB/OCM BP 40 - 22301 LANNION (FRANCE)
B. Guenais
Affiliation:
Centre National d’Etudes des Télécommunications LAB/OCM BP 40 - 22301 LANNION (FRANCE)
M. Minier
Affiliation:
Centre National d’Etudes des Télécommunications LAB/OCM BP 40 - 22301 LANNION (FRANCE)
G. Ropars
Affiliation:
Centre National d’Etudes des Télécommunications LAB/OCM BP 40 - 22301 LANNION (FRANCE)
P.A. Badoz
Affiliation:
Centre National d’Etudes des Télécommunications CNS/RPT BP 98 - 38243 MEYLAN CEDEX (FRANCE)
J.Y. Duboz
Affiliation:
Centre National d’Etudes des Télécommunications CNS/RPT BP 98 - 38243 MEYLAN CEDEX (FRANCE)
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Abstract

Successful growth of (001 )ErP0.6As0.4 single crystal film on (001) GaAs has been demonstrated. The epitaxial metallic layers reproducibly showed lattice mismatch below 5 10-4. This is, to our knowledge, the first report of a stable, epitaxial and lattice-matched metal/compound semiconductor heterostructure. The ErP0.6As0.4/n-GaAs diodes yielded excellent I-V characteristics with an ideality factor of 1.1 and barrier height of 0.88 eV. For a 240 A-thick film, metallic behavior was observed with resistivities of 25 and 86 µΩcm at 1.5 K and room temperature, respectively. As the other Er compounds ErP, ErAs, ErSb and ErSi2, ErP0.6As0.4 presents an abrupt drop in resistivity in the vicinity of the liquid helium temperature, due to a paramagnetic to antiferromagnetic phase transition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 331
Copyright
Copyright © Materials Research Society 1990

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References

1Richter, H.J., Smith, R.S., Herres, N., Seelmann-Eggebert, M. and Wennekers, P., Appl. Phys. Lett. 53, 99 (1988).Google Scholar
2Palmstrom, C.J., Tabatabale, N. and Allen, S.J. Jr.Appl. Phys. Lett. 53, 2608 (1988). Here, epitaxial ErAs has been reported with a RT resistivity of 70 µΩcm.Google Scholar
3Palmstrom, C.J., Garrison, K.C., Mounier, S., Sands, T., Schwartz, C.L., Tabatabaie, N., Allen, S.J. Jr.Gilchrist, H.L. and Miceli, P.F., J. Vac. Sci. Technol. B7, 747 (1989).Google Scholar
4Le Corre, A., Guivarc’h, A. and Caulet, J., French patent N° 89, 04 899 (13 April 1989).Google Scholar
5Guivarc’h, A., Caulet, J. and Le Corre, A., Electron. Lett. 25, 1051 (1989).Google Scholar
6Le Corre, A., Caulet, J. and Guivarc'h, A., Appl. Phys. Lett. (in press - 27 Nov. 1989).Google Scholar
7Caulet, J., Guenais, B., Le Corre, A., Ropars, G. and Guivarc’h, A., J. Cryst. Growth (in press).Google Scholar
8Secoué, M., Auvray, P., Toudic, Y., Ballini, Y. and Guérin, R.J. Cryst. Growth 76, 135 (1986).Google Scholar
9Secoué, M., Guivarc’h, A., Guenais, B., Auvray, P. and Toudic, Y. in Advanced Materials for Telecommunication 1986, edited by Glasow, P.A., Nissim, Y.I., Noblanc, J.P., Speicht, J. (les Editions de Physique). (European Mat. Res. Soc. Proc. XIII, Strasbourg 1986) pp. 467–474.Google Scholar
10Allen, S.J. Jr., Tabatabaie, N., Palmstrom, C.J., Hull, G.W., Sands, T., DeRosa, F., Gilchrist, H.L., and Garrison, K.C., Phys. Rev. Lett. 62, 2309 (1989).Google Scholar
11Duboz, J.Y., Badoz, P.A., Arnaud d’Avitaya, F., and Chroboczek, J.A., Appl. Phys. Lett 55, 85 (1989).Google Scholar
12Child, H.R., Wilkinson, M.K., Cable, J.W., Koehler, W.C. and Wollan, E.O., Phys. Rev. 131, 922 (1963). Using neutron scattering experiments, ErP and ErSb have been found to be antiferromagnetic with Néel temperature TN around 3.1 and 3.7 K respectively.Google Scholar