Hostname: page-component-745bb68f8f-hvd4g Total loading time: 0 Render date: 2025-01-26T05:20:59.874Z Has data issue: false hasContentIssue false
  • English
  • Français

Epitaxial Growth of AlN on 6H-SiC (1120) by Molecular-Beam Epitaxy and Effect of Low-Temperature Buffer Layer

Published online by Cambridge University Press:  11 February 2011

N. Onojima ,
J. Suda  and
H. Matsunami
N. Onojima
Affiliation:
Department of Electronic Science and Engineering, Kyoto University, Sakyo-ku, Kyoto 606–8501, Japan
J. Suda
Affiliation:
Department of Electronic Science and Engineering, Kyoto University, Sakyo-ku, Kyoto 606–8501, Japan
H. Matsunami
Affiliation:
Department of Electronic Science and Engineering, Kyoto University, Sakyo-ku, Kyoto 606–8501, Japan
Get access

Abstract

Aluminum nitride (AlN) has been grown on 6H-silicon carbide (SiC) substrates with the non-polar (1120) face using rf plasma-assisted molecular-beam epitaxy (rf-MBE). Reflection high-energy electron diffraction (RHEED) revealed that AlN and 6H-SiC (1120) had an exact epitaxial relationship, i.e., [1120]AlN|[1120]SiC and [0001]AlN∥[0001]SiC. From the result of microscopic Raman scattering spectroscopy, the stacking structure of the AlN epitaxial layer was suggested to be a 2H structure, not a 6H structure. A directly grown AlN layer and layer with AlN low-temperature (LT) buffer layer were investigated based on atomic force microscopy (AFM) and X-ray diffraction (XRD).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 743: Symposium L – GaN and Related Alloys , 2002 , L3.21
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Onojima, N., Suda, J. and Matsunami, H., J. Cryst. Growth 237–239, 1012 (2002).Google Scholar
2. Tanaka, S., Kern, R. S. and Davis, R. F., Appl. Phys. Lett., 66, 37 (1995).Google Scholar
3. Onojima, N., Suda, J. and Matsunami, H., Jpn. J. Appl. Phys., 41, L002 (2002).Google Scholar
4. Davydov, V. Y., Kitaev, Y. E., Goncharuk, I. N., Smirnov, A. N., Graul, J., Semchinova, O., Uffmann, D., Smirnov, M. B., Mirgorodsky, A. P. and Evarestov, R. A., Phys. Rev. B, 58, 12899 (1998).Google Scholar