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Epitaxial growth and characterization of cubic GaN on BP/Si(100) substrates

Published online by Cambridge University Press:  29 December 2011

Suzuka Nishimura ,
Muneyuki Hirai  and
Kazutaka Terashima
Suzuka Nishimura
Affiliation:
Solartes Lab., 2009-3 Endo, Fujisawa, Kanagawa 2520816, Japan Shonan institute of technology, 1-1-25 Tsujido Nishikaigan, Fujisawa, Kanagawa 251-8511, Japan
Muneyuki Hirai
Affiliation:
Solartes Lab., 2009-3 Endo, Fujisawa, Kanagawa 2520816, Japan
Kazutaka Terashima
Affiliation:
Shonan institute of technology, 1-1-25 Tsujido Nishikaigan, Fujisawa, Kanagawa 251-8511, Japan
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Abstract

We have focused to grow cubic GaN (c-GaN) on Si(100) substrates using boronmonophosphide (BP) buffer crystals. The growth of GaN was carried out by MOVPE on BP/Si(100) substrate of 2 inches in diameter. By the several evaluations, it was recognized that when the growth temperature is around 750˚C, c-GaN was dominant. The typical growth rate was about 0.5μm/h. We obtained c-GaN layer over 2.5μm thick without cracking.

Keywords

chemical vapor deposition (CVD) (deposition)crystal growthlaser
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1396: Symposium O – Compound Semiconductors for Generating, Emitting and Manipulating Energy , 2012 , mrsf11-1396-o07-38
Copyright
Copyright © Materials Research Society 2011

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References

REFERENCES

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