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Epitaxial Ge Films on Si Substrates

Published online by Cambridge University Press:  28 February 2011

J.S. Mccalmont ,
D. Robinson ,
K.M. Lakin  and
H.R. Shanks
J.S. Mccalmont
Affiliation:
Microelectronics Research Center, Iowa State University, Ames, IA 50011
D. Robinson
Affiliation:
Microelectronics Research Center, Iowa State University, Ames, IA 50011
K.M. Lakin
Affiliation:
Microelectronics Research Center, Iowa State University, Ames, IA 50011
H.R. Shanks
Affiliation:
Microelectronics Research Center, Iowa State University, Ames, IA 50011
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Abstract

Thin films of germanium have been prepared using an ultrahigh vacuum ionized-cluster beam (ICB) system. The dopant concentration of the films was varied by alloying the germanium source material with aluminum, a p-type dopant. X-ray diffraction analysis of the films has shown that an epitaxial (100) germanium film can be deposited on a (100) silicon substrate with a substrate temperature as low as 300°C. The results confirm that ICM deposition can be used to prepare epitaxial germanium films, but ionization of the clusters does not appear to affect the film growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 91: Symposium A – Heteroepitaxy on Silicon II , 1987 , 323
Copyright
Copyright © Materials Research Society 1987

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References

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