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Epitaxial Explosive Crystallization of Amorphous Silicon Layers Buried in a Silicon (100) and (111) Matrix

Published online by Cambridge University Press:  21 February 2011

P. A. Stolk ,
A. Polman  and
W. C. Sinke
P. A. Stolk
Affiliation:
FOM-Institute for Atomic and Molecular Physics Kruislaan 407, 1098 SJ Amsterdam, the Netherlands C.W.T. BULLE-LIEUWMA and D.E.W. VANDENHOUDT Philips Research Laboratories, P.O. Box 50000, 5600 JA Eindhoven, the Netherlands
A. Polman
Affiliation:
FOM-Institute for Atomic and Molecular Physics Kruislaan 407, 1098 SJ Amsterdam, the Netherlands C.W.T. BULLE-LIEUWMA and D.E.W. VANDENHOUDT Philips Research Laboratories, P.O. Box 50000, 5600 JA Eindhoven, the Netherlands
W. C. Sinke
Affiliation:
FOM-Institute for Atomic and Molecular Physics Kruislaan 407, 1098 SJ Amsterdam, the Netherlands C.W.T. BULLE-LIEUWMA and D.E.W. VANDENHOUDT Philips Research Laboratories, P.O. Box 50000, 5600 JA Eindhoven, the Netherlands
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Abstract

420 nm thick amorphous Si layers buried in a Si (100) or Si (111) matrix, produced by 350 keV Si-implantation, were irradiated using a pulsed ruby laser. Time-resolved reflectivity measurements show that melting can be initiated buried in the samples at the crystalline-amorphous interface. Melting is immediately followed by explosive crystallization of the buried amorphous layer, which is started from the crystalline top layer. The velocity of this self-sustained crystallization process is determined to be 15.0 ± 0.5 m/s for Si (100) and 14.0 ± 0.5 m/s for Si (111). RBS and cross-section TEM reveal that epitaxially grown crystalline Si, containing a high density of twin defects, is formed in both the Si (100) and the Si (111) sample.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 147: Symposium C – Ion Beam Processing of Advanced Electronic Materials , 1989 , 179
Copyright
Copyright © Materials Research Society 1989

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