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Epitaxal growth of InGaN quantum dots grown by MOVPE: Effect of capping process on the structural and optical properties

Published online by Cambridge University Press:  01 February 2011

Tomohiro Yamaguchi ,
Kathrin Sebald ,
Juergen Gutowski ,
Stephan Figge  and
Detlef Hommel
Tomohiro Yamaguchi
Affiliation:
[email protected], University of Bremen, Otto-Hahn-Allee NW1 M4090, Bremen, Bremen, 28359, Germany, ++49-421-218-7453, ++49-421-218-4581
Kathrin Sebald
Affiliation:
[email protected]
Juergen Gutowski
Affiliation:
[email protected]
Stephan Figge
Affiliation:
[email protected]
Detlef Hommel
Affiliation:
[email protected]
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Abstract

The surface morphology of thin InxGa1-xN layers in uncapped structures and the overgrowth using GaN or InxGa1-xN with a lower In content than the InxGa1-xN layer as the protection layer of the InxGa1-xN layer were investigated in addition to their dependence on growth temperature during the growth by metalorganic vapor phase epitaxy (MOVPE). It was necessary to decrease the growth temperature of the InxGa1-xN layer in order to realize homogeneous dots. In order to obtain a high luminescence efficiency, on the other hand, it was essential to increase the growth temperature of the protection layer. Sharp lines related to the localized electronic states, which are attributed to InGaN quantum dots, were observed by micro-photoluminescence (μ-PL) for the samples with the InxGa1-xN layers protected by the InxGa1-xN layers grown at 700∼740°C.

Keywords

nitridechemical vapor deposition (CVD) (deposition)nanostructure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF11-01
Copyright
Copyright © Materials Research Society 2006

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