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Enhancement of Lateral Solid Phase Epitaxial Growth of Si on SiO2 with 31P Implantation

Published online by Cambridge University Press:  28 February 2011

C. S. Pai ,
J. C. Bean ,
M. Cerullo ,
K. T. Short  and
A. E. White
C. S. Pai
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
J. C. Bean
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
M. Cerullo
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
K. T. Short
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
A. E. White
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
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Abstract

The lateral solid phase epitaxial growth of amorphous Si on SiO2 patterns with 31P implantation is studied. By implanting 31P into only the surface region of the sample to form a doped channel, the Si growth rate is enhanced and the random crystallization of Si is suppressed. The maximum length of lateral solid phase epitaxial Si obtained from samples with the doped channel (∼9μπι) is a factor of 3 more than that of the undoped sample. This Si on SiO2 film has a low dopant concentration after the highly doped channel is removed and should be useful for device application.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 107: Symposium H – Silicon-on-Insulator and Buried Metals in Semiconductors , 1987 , 507
Copyright
Copyright © Materials Research Society 1988

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