Hostname: page-component-586b7cd67f-dsjbd Total loading time: 0 Render date: 2024-11-24T15:24:48.803Z Has data issue: false hasContentIssue false
  • English
  • Français

Enhancement of Ferroelectricity and Magnetoelectric Effect of BiFeO3 Thin Films on Membrane Structure

Published online by Cambridge University Press:  26 February 2011

Seiji Nakashima ,
Kwi-Young Yun ,
Yoshitaka Nakamura  and
Masanori Okuyama
Seiji Nakashima
Affiliation:
[email protected], Osaka University, Graduate school of Engineering Science, 1-3 Machikaneyama-cho, Toyonaka, 560-8531, Japan, +81-6-6850-6332, +81-6-6850-341
Kwi-Young Yun
Affiliation:
[email protected], Graduate school of Engineering Science, Osaka University, Division of Advanced Electronics and Optical Science, Department of Systems Innovation, 1-3 Machikaneyama-cho, Toyonaka, 560-8531, Japan
Yoshitaka Nakamura
Affiliation:
[email protected], Graduate school of Engineering Science, Osaka University, Division of Advanced Electronics and Optical Science, Department of Systems Innovation, 1-3 Machikaneyama-cho, Toyonaka, 560-8531, Japan
Masanori Okuyama
Affiliation:
[email protected], Graduate school of Engineering Science, Osaka University, Division of Advanced Electronics and Optical Science, Department of Systems Innovation, 1-3 Machikaneyama-cho, Toyonaka, 560-8531, Japan
Get access

Abstract

Multiferroic BiFeO3 thin films have been prepared on Pt/TiO2/SiO2/thick (200 μm) and membrane (15 μm) Si substrate by pulsed laser deposition (PLD) to confirm the influence of stress from substrate. Si membrane was obtained by etching using reactive ion etching (RIE) until thickness is to be 15 μm. The X-ray diffraction peaks of BiFeO3 thin film on Pt/TiO2/SiO2/Si (15 μm) membrane substrate slightly shift to lower angles, compared to those on Pt/TiO2/SiO2/Si (200 μm) substrate. Ferroelectric hysteresis loops were also measured at 150 K before and after Si etching by RIE. The BiFeO3 thin film on the Pt/TiO2/SiO2/Si (15 μm) membrane structure shows remanent polarization (Pr) of 95 μC/cm2 for a maximum applied voltage of 18 V, which is larger than Pr = 71 μC/cm2 of BiFeO3 thin film on Pt/TiO2/SiO2/Si (200 μm) substrate at the same measurement conditions. Under magnetic field of 1.1 T, remanent polarization (Pr) of BiFeO3 thin film on Pt/TiO2/SiO2/Si (15 μm) membrane structure increased from 95 μC/cm2 to 101 μC/cm2 at 150 K due to stress relaxation of BiFeO3 thin film.

Keywords

ferroelectricitythin filmablation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 966: Symposium T – Ferroelectrics and Multiferroics , 2006 , 0966-T03-13
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Smolenskii, G. A. and Yudin, V. M., Sov. Phys. JETP. 16, 622 (1963).Google Scholar
2. Ismilzade, J. G., Phys. Status. Solidi. B 46, K39 (1971).Google Scholar
3. Kubel, F. and Schmid, H., Acta Crystallogr. 46, 698 (1990)Google Scholar
4. Teague, J. R., Gerson, R., and James, W. J., Solid State Commun. 8, 1073 (1970).Google Scholar
5. Wang, J., Neaton, J. B., Zheng, H., Nagarajan, V., Ogale, S. B., Liu, B., Viehland, D., Vaithyanathan, V., Schlom, D. G., Waghmare, U. V., Spaldin, N. A., Rabe, K. M., Wuttig, M., and Ramesh, R., Science 299, 1719 (2003).Google Scholar
6. Li, J. F., Wang, J., Wuttig, M., Ramesh, R., Wang, N., Ruette, B., Pyatakov, A. P., Zvezdin, A. K., and Viehland, D., Appl. Phys. Lett. 84, 5261 (2004).Google Scholar
7. Singh, S. K., Ueno, R., Funakubo, H., Uchida, H., Koda, S., Ishiwara, H., Jpn. J. Appl. Phys. 44. 8525 (2005).Google Scholar
8. Yun, K. Y., Ricinschi, D., Kanashima, T., Noda, M., and Okuyama, M., Appl. Phys. Lett. 89, 192902 (2006).Google Scholar
9. Kiselev, S. V., Ozerov, R. P., and Zhdanov, G. S., Sov. Phys. Dokl. 7, 742 (1963).Google Scholar
10. Ederer, C. and Spaldin, N. A., Phys. Rev. Lett. 95, 257601(2005).Google Scholar
11. Nakashima, S., Yun, K. Y., Nakamura, Y., and Okuyama, M., J. Kor. Phys. Soc. (accepted)Google Scholar
12. Bucci, J. D., Robertson, B. K. and James, W. J., J. Appl. Cryst. 5, 178 (1972).Google Scholar