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Enhanced Seebeck Coefficient of Amorphous Oxide Semiconductor Superlattices

Published online by Cambridge University Press:  01 February 2011

Hiromichi Ohta ,
Rong Huang  and
Yuichi Ikuhara
Hiromichi Ohta
Affiliation:
[email protected], Nagoya University, Graduate School of Engineering, Furo-cho, Chikusa, Nagoya, 464-8603, Japan, +81-52-789-3202, +81-52-789-3201
Rong Huang
Affiliation:
[email protected], Japan Fine Ceramics Center, Nanostructures Research Laboratory, 2-4-1 Mutsuno, Atsuta, Nagoya, 456-8587, Japan
Yuichi Ikuhara
Affiliation:
[email protected], Japan Fine Ceramics Center, Nanostructures Research Laboratory, 2-4-1 Mutsuno, Atsuta, Nagoya, 456-8587, Japan
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Abstract

We propose herein that amorphous oxide semiconductor (AOS) superlattices, which can be deposited on various substrate including glasses or plastics without any substrate heating, are appropriate for the realization of superlattice thermoelectric devices. As an example, thermoelectric properties of AOS superlattices composed of a-In-Zn-O (well) and a-In-Ga-Zn-O (barrier) layers, fabricated on SiO2 glass substrate by pulsed laser deposition at room temperature, were measured to clarify whether enhancement of Seebeck coefficient |S| occurs or not. The |S|2D value increases drastically with decreasing a-In-Zn-O thickness (dIZO) when the dIZO is < ∼5 nm, and reached 73 μV·K-1 (dIZO = 0.3 nm), which is ∼4 times larger than that of bulk |S|3D (19 μV·K-1), while it kept high electrical conductivity, clearly demonstrating that the quantum size effect can be utilized in AOS superlattices.

Keywords

thermoelectricityamorphousthin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1044: Symposium U – Thermoelectric Power Generation , 2007 , 1044-U09-09
Copyright
Copyright © Materials Research Society 2008

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