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Enhanced Relaxation of Strained GexSi1−x Layers Induced by Co/GexSi1−x Thermal Reaction

Published online by Cambridge University Press:  03 September 2012

M.C. Ridgway ,
M.R. Rao  and
J.-M. Baribeau
M.C. Ridgway
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra, Australia
M.R. Rao
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra, Australia
J.-M. Baribeau
Affiliation:
Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Canada
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Abstract

Silicide formation on strained GexSilx layers by the thermally-induced metal/GexSi1−x reaction results in enhanced relaxation of the underlying strained layer. Silicide formation on an amorphous layer is a potential means of decreasing processing temperatures, increasing reacted-layer/GexSi1−x interface planarity and hence, decreasing strained layer relaxation. For the present report, the thermally-induced Co/Ge.17Si.83 reaction on crystalline and amorphous substrates at temperatures of 500-600°C has been compared. Though the rate of silicide formation increased with amorphous substrates, strained layer relaxation was not inhibited.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 320: Symposium D – Silicides, Germanides, and Their Interfaces , 1993 , 329
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

[1] Ridgway, M.C., Elliman, R.G., Hauser, N., Baribeau, J.-M. and Jackman, T.E., in Advanced Ietallization and Processing for Semiconductor Devices and Circuits - II, eds. Katz, A., Murarka, S.P., Nissim, Y.I. and Harper, J.M.E. (Mat.Res.Soc., Pittsburgh, 1992) p. 857.Google Scholar
[2] Ridgway, M.C., Elliman, R.G., Pascual, R., Whitton, J.L. and J.- Baribeau, M., in Phase Transformations in Thin Films - Thermodynamics and Kinetics, eds. Atzmon, M., Greer, A.L., Harper, J.M.E. and Libera, M.R. (Mat.Res.Soc., Pittsburgh, 1993) p. 155.Google Scholar
[3] Buxbaum, A., Zolotoyabko, E., M. Eizenberg and Schaffler, F., Thin Solid Films 222 (1992) 157.Google Scholar
[4] Higgs, V., Kightley, P., Goodhew, J. and Augustus, P.D., Appl.Phys.Lett. 59 (1991) 829.Google Scholar
[5] d'Heurle, F.M. and Petersson, C.S., Thin Solid Films 128 (1985) 283.Google Scholar
[6] Lien, C.-D., Nicolet, M.-A. and Lau, S.S., Appl.Phys. A34 (1984) 249.Google Scholar
[7] Baribeau, J.-M., Jackman, T.E., Houghton, D.C., Maigne, P. and Denhoff, M.W., J.Appl.Phys. 63 (1988) 5738.CrossRefGoogle Scholar
[8] Olson, G.L. and Roth, J.A., Mat.Sci.Rep. 1 (1988) 1.CrossRefGoogle Scholar
[9] Elliman, R.G., private communication.Google Scholar
[10] Lau, S.S., Mayer, J.W. and Tu, K.N., J.Appl.Phys. 49 (1978) 4005.Google Scholar
[11] Nicolet, M.-A. and Lau, S.S., in VLSI Electronics: Microstructure Science. Vol. 6, eds. Einspruch, N.G. and Larrabee, G.B. (Academic Press, New York, 1983) p. 329.Google Scholar
[12] Hong, Q.Z., Zhu, J.G., Mayer, J.W., Xia, W. and Lau, S.S., J.Appl.Phys. 71 (1992) 1768.Google Scholar
[13] Drozdy, G., Ronkainen, H. and Suni, I., Appl.Surf.Sci. 38 (1989) 72.Google Scholar
[14] Spaepen, F. and Turnbull, D., American Institute of Physics Conference Proceedings. Vol 50 (1979) p. 73.Google Scholar
[15] Donovan, E.P., Spaepen, F., Turnbull, D., Poate, J.M. and Jacobson, D.C., J.Appl.Phys. 57 (1985) 1795.CrossRefGoogle Scholar
[16] Rao, M.R., Ridgway, M.C., Elliman, R.G. and Baribeau, J.-M., to be published.Google Scholar