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Enhanced Mobility of Organic Field-Effect Transistors with Epitaxially Grown C60 Film by in-situ Heat Treatment of the Organic Dielectric

Published online by Cambridge University Press:  01 February 2011

Th. B. Singh ,
N. Marjanovic ,
G. J. Matt ,
S. Günes ,
N. S. Sariciftci ,
A. Montaigne Ramil ,
A. Andreev ,
H. Sitter ,
R. Schwödiauer  and
S. Bauer
Th. B. Singh*
Affiliation:
Linz Institute for Organic Solar Cells (LIOS), Physical Chemistry, Johannes Kepler University Linz, Austria
N. Marjanovic
Affiliation:
Linz Institute for Organic Solar Cells (LIOS), Physical Chemistry, Johannes Kepler University Linz, Austria
G. J. Matt
Affiliation:
Linz Institute for Organic Solar Cells (LIOS), Physical Chemistry, Johannes Kepler University Linz, Austria
S. Günes
Affiliation:
Linz Institute for Organic Solar Cells (LIOS), Physical Chemistry, Johannes Kepler University Linz, Austria
N. S. Sariciftci
Affiliation:
Linz Institute for Organic Solar Cells (LIOS), Physical Chemistry, Johannes Kepler University Linz, Austria
A. Montaigne Ramil
Affiliation:
Institute of Semiconductor- and Solid State Physics, Johannes Kepler University Linz, Austria
A. Andreev
Affiliation:
Institute of Semiconductor- and Solid State Physics, Johannes Kepler University Linz, Austria
H. Sitter
Affiliation:
Institute of Semiconductor- and Solid State Physics, Johannes Kepler University Linz, Austria
R. Schwödiauer
Affiliation:
Soft Matter Physics, Johannes Kepler University Linz, Austria
S. Bauer
Affiliation:
Soft Matter Physics, Johannes Kepler University Linz, Austria
*
§Corresponding author. e-mail: [email protected]
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Abstract

Electron mobilities were studied as a function of thin-film growth conditions in hot wall epitaxially grown C60 based field-effect transistors. Mobilities in the range of ∼ 0.5 to 6 cm2/Vs are obtained depending on the thin-film morphology arising from the initial growth conditions. Moreover, the field-effect transistor current is determined by the morphology of the film at the interface with the dielectric, while the upper layers are less relevant to the transport. At high electric fields, a non-linear transport has been observed. This effect is assigned to be either because of the dominance of the contact resistance over the channel resistance or because of the gradual move of the Fermi level towards the band edge as more and more empty traps are filled due to charge injection.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 871: Symposium I – Organic Thin-Film Electronics , 2005 , I4.9
Copyright
Copyright © Materials Research Society 2005

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