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Enhanced Emission from InxGa1-xN-based LED Structures Using III-Nitride based Distributed Bragg Reflector

Published online by Cambridge University Press:  08 February 2012

K. Lee ,
A. Kadiyala ,
L. E. Rodak ,
R. Goswami ,
V. Kumbham ,
B. A. Bearce ,
J. Justice ,
J. Peacock ,
J. M. Dawson  and
L. A. Hornak
...Show all authors
K. Lee
Affiliation:
Lane Department of Computer Science and Electrical Engineering, West Virginia University, Morgantown, WV 26506, USA
A. Kadiyala
Affiliation:
Lane Department of Computer Science and Electrical Engineering, West Virginia University, Morgantown, WV 26506, USA
L. E. Rodak
Affiliation:
Lane Department of Computer Science and Electrical Engineering, West Virginia University, Morgantown, WV 26506, USA
R. Goswami
Affiliation:
Lane Department of Computer Science and Electrical Engineering, West Virginia University, Morgantown, WV 26506, USA
V. Kumbham
Affiliation:
Lane Department of Computer Science and Electrical Engineering, West Virginia University, Morgantown, WV 26506, USA
B. A. Bearce
Affiliation:
Lane Department of Computer Science and Electrical Engineering, West Virginia University, Morgantown, WV 26506, USA
J. Justice
Affiliation:
Lane Department of Computer Science and Electrical Engineering, West Virginia University, Morgantown, WV 26506, USA
J. Peacock
Affiliation:
Lane Department of Computer Science and Electrical Engineering, West Virginia University, Morgantown, WV 26506, USA
J. M. Dawson
Affiliation:
Lane Department of Computer Science and Electrical Engineering, West Virginia University, Morgantown, WV 26506, USA
L. A. Hornak
Affiliation:
Lane Department of Computer Science and Electrical Engineering, West Virginia University, Morgantown, WV 26506, USA
D. Korakakis
Affiliation:
Lane Department of Computer Science and Electrical Engineering, West Virginia University, Morgantown, WV 26506, USA
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Abstract

InxGa1-xN-based LED structures were grown on digital AlxGa1-xN/GaN DBR substrate to enhance emission extraction. Same LED structure was grown on sapphire substrate as a comparison. LEDs grown on DBR substrate exhibited similar IV characteristics to that grown on sapphire substrate but emission-angle-dependent EL spectra were observed. Also, the resonant vertical cavity modes were observed in EL spectra of LEDs with DBR structure and compared to simulated results. Image processing analysis results show that light extraction of LEDs is enhanced with use of DBR substrate.

Keywords

optoelectronicchemical vapor deposition (CVD) (deposition)crystal growth
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1396: Symposium O – Compound Semiconductors for Generating, Emitting and Manipulating Energy , 2012 , mrsf11-1396-o07-43
Copyright
Copyright © Materials Research Society 2012

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References

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