Hostname: page-component-586b7cd67f-rcrh6 Total loading time: 0 Render date: 2024-11-30T22:58:00.081Z Has data issue: false hasContentIssue false

Energy Levels of Point Defects in Perovskite Oxides

Published online by Cambridge University Press:  15 February 2011

J. Robertson
Affiliation:
Engineering Dept, Cambridge University, Cambridge CB2 1PZ, UK
W. L. Warren
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185–1349.
Get access

Abstract

The band structure and energy levels of defects in BaTi3, PbTiO3 and PbZrO3 are calculated and compared. The band gap of Pb(Zr,Ti)O3 varies little because the band edges are formed of Pb 6s and 6p states. The charged Ti and O vacancies are found to be shallow. Transition metal impurities at the B site are found to give rise to numerous charge states because of their high intra-atomic electron repulsion. The levels of Cr4+, Fe4+ and Co4+ lie near midgap. Ti3+ trapped electron centers become deep at higher Zr contents in PZT.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Dimos, D, Warren, W L, Turtle, B A, Sinclair, M, Schwartz, R N, J Appl Phys 76 4305 (1994)Google Scholar
2. Wolfram, T, Kraut, E A and Morin, F J, Phys Rev B 7 1677 (1973)Google Scholar
3. WHarrison, A, ‘Electronic Structure of Solids’ (W H Freeman, San Francisco, 1979)Google Scholar
4. Mattheis, L F, Phys Rev B 6 4718 (1973)Google Scholar
5. Mattheis, L F, Phys Rev B 42 359 (1990)Google Scholar
6. Robertson, J, Philos Mag B 43 497 (1981)Google Scholar
7. Cohen, R E, Nature 358 136 (1992)Google Scholar
8. King-Smith, R D and Vanderbilt, D, Phys Rev B 49 5828 (1994)Google Scholar
9. Smyth, D M, Ann Rev Mater Sci 15 329 (1985)Google Scholar
10. Robertson, J, Warren, W L, Tuttle, B A, Dimos, D and Smyth, D M, Appl Phys Lett 63 1519 (1994)Google Scholar
11. Robertson, J, Warren, W L and Tuttle, B A, J Appl Phys, to be published (1995)Google Scholar
12. Peng, C H, Chang, J F and Desu, S B, Mat Res Soc Symp Proc 243 21 (1992)Google Scholar
13. Hjalmarson, H J, Vogl, P, Wolford, D J and Dow, J D, Phys Rev Lett 44 810 (1980)Google Scholar
14. Picoli, G, Chomette, A and Lannoo, M, Phys Rev B 30 7138 (1984)Google Scholar
15. Delenie, C, Lanno, M and Allan, G, Phys Rev B 39 1669 (1989)Google Scholar
16. Parker, D and Yahia, J, Phys Rev 169 605 (1968)Google Scholar
17. Gibson, A, Haydock, R and LaFemina, J P, Phys Rev B 50 2582 (1994)Google Scholar
18. MRaymond, V and Smyth, D M, Integrated Ferroelectrics 4 145 (1994)Google Scholar
19. Muller, K A, J Physique 42 551 (1981)Google Scholar
20. Possenriede, E, Jacobs, P and Schirmer, O F, J Phys Condens Mat 4 4719 (1992)Google Scholar
21. Haldane, F and Anderson, P W, Phys Rev B 13 2553 (1976)Google Scholar
21. Warren, W L, Tuttle, B A, Sun, B N, Huang, Y and Payne, D A, App Phys Lett 62 146 (1993)Google Scholar
22. Warren, W L, Seager, C H, Dimos, D and Friebele, E J, App Phys Lett 61 2530 (1992)Google Scholar
23. Molak, A and Wojcik, K, Ferroelectrics 125 349 (1992)Google Scholar