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Ellipsometry as a Sensitive Technique to Probe film -Substrate Interfaces: Al2O3 on Si(100)

Published online by Cambridge University Press:  21 March 2011

M. P. Singh ,
G. Raghavan ,
A. K. Tyagi  and
S. A. Shivashankar
M. P. Singh
Affiliation:
Materials Research Centre, Indian Institute of Science, Bangalore, India
G. Raghavan
Affiliation:
Indira Gandhi Centre for Atomic Research, Kalpakkam, India
A. K. Tyagi
Affiliation:
Indira Gandhi Centre for Atomic Research, Kalpakkam, India
S. A. Shivashankar
Affiliation:
Materials Research Centre, Indian Institute of Science, Bangalore, India
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Abstract

An attempt has been made to study the film-substrate interface by using a sensitive, non- conventional tool. Because of the prospective use of gate oxide in MOSFET devices, we have chosen to study alumina films grown on silicon. Film-substrate interface of alumina grown by MOCVD on Si(100) was studied systematically using spectroscopic ellipsometry in the range 1.5-5.0 eV, supported by cross-sectional SEM, and SIMS. The (ε1,ε2) versus energy data obtained for films grown at 600°C, 700°C, and 750°C were modeled to fit a substrate/interface/film “sandwich”. The experimental results reveal (as may be expected) that the nature of the substrate -film interface depends strongly on the growth temperature. The simulated (ε1,ε2) patterns are in excellent agreement with observed ellipsometric data. The MOCVD precursors results the presence of carbon in the films. Theoretical simulation was able to account for the ellipsometry data by invoking the presence of “free” carbon in the alumina films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 654: Symposia AA – Structure-Property Relationships of Oxide Surfaces & Interfaces , 2000 , AA3.33.1
Copyright
Copyright © Materials Research Society 2001

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