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Ellipsometric Study of the Interface Between Silicon and Silica

Published online by Cambridge University Press:  21 February 2011

R. H. Doremus  and
S. C. Kao
R. H. Doremus
Affiliation:
Materials Engineering Department, Rensselaer Polytechnic Institute, Troy, NY 12180-3590
S. C. Kao
Affiliation:
Komag, 275 South Hillview Drive, Milpitas, CA 95035
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Abstract

Ellipsometric measurements of surfaces of oxidized silicon give information on the optical properties, structure and composition of the interface between the silicon and oxide. From such measurements in ambient liquids with different refractive indices, some close to that of the oxide, we conclude that there is an interfacial layer about one nm thick at all oxide thicknesses. This layer is either a transition layer of partially oxidized silicon or a layer of silicon of higher absorption than bulk silicon. The oxide has the refractive index of vitreous silica at all thicknesses.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 318: Symposium Ca – Interface Control of Electrical, Chemical, and Mechanical Properties , 1993 , 53
Copyright
Copyright © Materials Research Society 1994

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References

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