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Elimination of Degenerate Epitaxy in the Growth of High Quality B12As2 Single Crystalline Epitaxial Films

Published online by Cambridge University Press:  24 March 2011

Yu Zhang ,
Hui Chen ,
Michael Dudley ,
Yi Zhang ,
J. H. Edgar ,
Yinyan Gong ,
Silvia Bakalova ,
Martin Kuball ,
Lihua Zhang  and
Dong Su
...Show all authors
Yu Zhang
Affiliation:
Department of Materials Science and Engineering, Stony Brook University, Stony Brook, NY, 11794-2275, U.S.A.
Hui Chen
Affiliation:
Department of Materials Science and Engineering, Stony Brook University, Stony Brook, NY, 11794-2275, U.S.A.
Michael Dudley
Affiliation:
Department of Materials Science and Engineering, Stony Brook University, Stony Brook, NY, 11794-2275, U.S.A.
Yi Zhang
Affiliation:
Department of Chemical Engineering, Kansas State University, Manhattan, KS 66506, U.S.A.
J. H. Edgar
Affiliation:
Department of Chemical Engineering, Kansas State University, Manhattan, KS 66506, U.S.A.
Yinyan Gong
Affiliation:
H.H. Wills Physics Laboratory, University of Bristol, Bristol, United Kingdom
Silvia Bakalova
Affiliation:
H.H. Wills Physics Laboratory, University of Bristol, Bristol, United Kingdom
Martin Kuball
Affiliation:
H.H. Wills Physics Laboratory, University of Bristol, Bristol, United Kingdom
Lihua Zhang
Affiliation:
Center for Functional Materials, Brookhaven National Laboratory, Upton, NY 11973-5000, U.S.A.
Dong Su
Affiliation:
Center for Functional Materials, Brookhaven National Laboratory, Upton, NY 11973-5000, U.S.A.
Yimei Zhu
Affiliation:
Center for Functional Materials, Brookhaven National Laboratory, Upton, NY 11973-5000, U.S.A.
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Abstract

Elimination of degenerate epitaxy in the growth of icosahedral boron arsenide (B12As2, abbreviated as IBA) was achieved on m-plane 15R-SiC substrates and 4H-SiC substrates intentionally misoriented by 7 degrees from (0001) towards [1-100]. Synchrotron white beam x-ray topography (SWBXT) revealed that only single orientation IBA was present in the epitaxial layers demonstrating the absence of twin variants which dominantly constitute the effects of degenerate epitaxy. Additionally, low asterism in the IBA diffraction spots compared to those grown on other SiC substrates indicates a superior film quality. Cross-sectional high resolution transmission electron microscopy (HRTEM) and scanning transmission electron microscopy (STEM) both confirmed the absence of twins in the IBA films and their high quality. The ease of nucleation on the ordered step structures present on these unique substrates overrides symmetry considerations that drive degenerate epitaxy and dominates the nucleation process of the IBA.

Keywords

crystal growththin filmtransmission electron microscopy (TEM)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1307: Symposium CC – Boron and Boron Compounds—From Fundamentals to Applications , 2011 , mrsf10-1307-cc02-03
Copyright
Copyright © Materials Research Society 2011

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References

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