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Electro-Optical Studies of Vanadium in GaP by Space Charge Spectroscopies

Published online by Cambridge University Press:  22 February 2011

Georges Bremond ,
G. Guillot ,
P. Roura  and
W. Ulrici
Georges Bremond
Affiliation:
Laboratoire de Physique de la Matière (UA CNRS 358), INSA de Lyon, Bât.502. F-69621 Villeurbanne Cédex, France
G. Guillot
Affiliation:
Laboratoire de Physique de la Matière (UA CNRS 358), INSA de Lyon, Bât.502. F-69621 Villeurbanne Cédex, France
P. Roura
Affiliation:
Catedra d'Electronica, Universitat Barcelona, Diagonal 645, Barcelona 08128, Spain
W. Ulrici
Affiliation:
Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5–7, 0–1086 Berlin, Germany
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Abstract

A complete understanding of the electrical and optical properties of the Vanadium related donor level (VGa3+/VGa4+) in GaP is deduced from a number of different characterization techniques (deep level transient and deep level optical spectroscopies, optical absorption) performed on p-type V doped GaP. The VGa3+/VGa4+ donor level is located at Ev+0.25eV. This assignment is based on the correlation of optical absorption spectra and the photoneutralization cross-section σp°(hv) curve obtained by deep level optical spectroscopy confirming that this technique is very unique for deep level identification in semiconductor materials.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 261: Symposium D – Photo-Induced Space Charge Effects in Semiconductors: Electro-Optics, Photoconductivity and the Photorefractive Effect , 1992 , 229
Copyright
Copyright © Materials Research Society 1992

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References

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