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Electronic Transport and the Density of States Distribution in a-(Si, Ge):H, F Alloys

Published online by Cambridge University Press:  28 February 2011

S. Aljishi ,
Z E. Smith ,
D. Slobodin ,
J. Kolodzey ,
V. Chu ,
R. Schwarz  and
S. Wagner
S. Aljishi
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
Z E. Smith
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
D. Slobodin
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
J. Kolodzey
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
V. Chu
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
R. Schwarz
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
S. Wagner
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
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Abstract

The electronic and optical properties of amorphous silicon-germanium alloys produced by d.c. and r.f. glow discharge are reported. Data on the sub-gap absorption, dark and photo conductivities, drift mobilities and drift mobility-lifetime products are used to propose a density of states model.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 70: Symposium E – Materials Issues in Amorphous-Semiconductor Technology , 1986 , 269
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

1. Yukimoto, Y., in JARECT Vol.6, “Amorphous Semiconductor Technologies & Devices,” Hamakawa, Y., ed., Ohmasha and North Holland, New York 1983; p. 136.Google Scholar
2 Oda, S., Ishinara, S., Shibita, N., Takagi, S., Shirai, H., Miyauchi, A. and Shimizu, I., J. Non-Cryst. Solids, 77&78 (1985) 877.CrossRefGoogle Scholar
3. Nakano, S., Kishi, Y., Ohnishi, M., Tsuda, S., Shibuya, H., Nakamura, N., Hishikawa, Y., Tarui, H., Takahama, T and Kuwano, Y., Mat. Res. Symp. Proc., vol. 49, p. 275, ed. by Adler, D., Madan, A. and Thompson, M.J., (1985).Google Scholar
4. Mackenzie, K D., Eggert, J R., Leopold, D.J., Lin, Y.M. and Paul, W., Phys. Rev. B, 31 (1985), 2198.Google Scholar
5. Oda, S., Takagi, S., Ishihara, S. and Shimizu, I., in “Tetrahedrally-Bonded Amorphous Semiconductors,” (Plenum, New York, 1985) 379.Google Scholar
6. Huang, C.-Y., Guha, S. and Hudgens, S.J., J. Non-Cryst. Solids, 86 (1984) 187.Google Scholar
7. Skumanich, A., Frova, A. and Amer, N.M., Sol. St. Commun., 54 (1985) 597.Google Scholar
8. Slobodin, D., Aljishi, S., Schwarz, R. and Wagner, S., Mat. Res. Symp. Proc., vol.49, p. 153, ed. by Adler, D., Madan, A. and Thompson, M.J. (1985).CrossRefGoogle Scholar
9. Slobodin, D., Kolodzey, J., Aljishi, S., Okada, Y., Chu, V., Shen, D. -S., Schwarz, R. and Wagner, S., Proc. 18th IEEE Photovoltaic Specialists Conference, Las Vegas, 1985, to be published.Google Scholar
10. Kolodzey, J., Aljishi, S., Schwarz, R. and Wagner, S., Electrochemical Society Spring Meeting, Toronto, Abstract No. 176, May 1985.Google Scholar
11. Kolodzey, J., Aljishi, S., Schwarz, R. and Wagner, S., submitted to J. Vac. Sci. Technol.Google Scholar
12. Stika, O. and Triska, A., Sol. Energy Mater., 8 (1983) 411.Google Scholar
13. Street, R.A., Phys. Rev, B, 27 (1983) 4924.Google Scholar
14. Tiedje, T., in Semiconductors and Semimetals - Part C, ed. by Pankove, J. (Academic Press, Orlando, FL, 1984), 21 (1984) 207.Google Scholar
15. Tiedje, T., Cebulka, J.M., Morel, D L. and Abeles, B., Phys. Rev. Lett., 46 (1981) 1425.CrossRefGoogle Scholar
16. Wronski, C.R., Abeles, B., Tiedje, T. and Cody, G D., Sol. State Commun., 44 (1985) 1423.Google Scholar
17. Jackson, W B. and Amer, N.M., Phys. Rev. B, 25 (1982) 5559.Google Scholar
18. Shen, D.-S., Kolodzey, J., Slobodin, D., Conde, J.P., Lane, C., Campbell, I.H., Fauchet, P.M. and Wagner, S., this volume.Google Scholar
19. Morimoto, A., Miura, T., Kumeda, M. and Shimizu, T., Jap. J. Appl. Phys., 20 L833 (1981).Google Scholar
20. Finger, F., Carius, R., Fuhs, W. and Schrimpf, A., J. Non-Crys. Solids, 77&78 731 (1985).Google Scholar
21. Kolodzey, J., Aljishi, S., Schwarz, R., Shen, D.-S., Quinlan, S., Lyon, S.A. and Wagner, S., this volume.Google Scholar
22. Tiedje, T., Wronski, C.R., Persans, P. and Abeles, B., J. Non-Crys. Solids, 77&78, 1031 (1985).Google Scholar
23. Stutzmann, M., Stuke, J. and Dersch, H., Phys. Stat. Sol. (b), 115 (1983) 141.Google Scholar
24. Stutzmann, M., Jackson, W.B. and Tsai, C.C., Mat. Res. Symp. Proc., vol. 49, p. 301, ed. by Adler, D., Madan, A. and Thompson, M.J., (1985).Google Scholar
25. Weisz, S.Z., Gomez, M., Muir, J A., Perez, R., Goldstein, Y. and Abeles, B., Appl. Phys. Lett., 44 (1984) 634.CrossRefGoogle Scholar
26. Dersch, H., Stuke, J. and Beichler, B., Phys. Stat. Sol. (b), 105 (1981) 265.Google Scholar
27. Jackson, W.B., Sol. State Commun., 44 (1982) 477.Google Scholar