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Electronic Structure of Wide Bandgap Semiconductor Interfaces: Cubic SiC/AIN, SiC/BP, C/BN

Published online by Cambridge University Press:  26 February 2011

W. R. L. Lambrecht  and
B. Segall
W. R. L. Lambrecht
Affiliation:
Department of Physics, Case Western Reserve University, Cleveland, OH 44106
B. Segall
Affiliation:
Department of Physics, Case Western Reserve University, Cleveland, OH 44106
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Abstract

The linear muffin-tin orbital supercell band-structure method is used to calculate the interface energy of formation, band offsets and local densities of states at the latticematched (110) heterojunctions between (cubic SiC)/(cubic AIN), (cubic SiC)/(cubic BP) and (diamond C)/(cubic BN). The lowest energy bonding configuration for SiC/AIN is found to be Si to N and C to Al bonding while for SiC/BP, Si is found to bind to B and C to P. The causes for these preferred bonding configurations are explained in terms of electrostatic effects. The band offsets are found to be of type II for SiC/BP and SiC/BN and of type I for SiC/AIN.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 162: Symposium F – Diamond, Silicon Carbide and Related Wide Bandgap Semiconductors , 1989 , 501
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

[1] Amorphous and Crystalline Silicon Carbide and Related Materials, edited by Harris, G. L. and Yang, C.Y.-W., Proceedings in Physics, Vol.34, (Springer, Berlin 1989)Google Scholar
[2] Novel Refractory Semiconductors, edited by Emin, D., Aselage, T., Wood, C., Mat. Res. Symp. Proc. Vol.97, (MRS, Pittsburgh 1987)Google Scholar
[3] Angus, J. C. and Hayman, C. C., Science 241, 877 (1988), and references therein.Google Scholar
[4] Mishima, O., Era, K., Tanaka, J. and Yamaoka, S., Appl. Phys. Lett. 53, 962 (1988)Google Scholar
[5] Badzian, A. R., Mater. Res. Bull. 16, 1385 (1981)Google Scholar
[6] Slack, G. A., Tansilli, R. A., Pohl, R. O. and Vandersande, J. W., J. Phys. Chem. Solids 48, 641 (1987)Google Scholar
[7] Rutz, R. F. and Cuomo, J. J., in Silicon Carbide 1973, ed. Marshall, R. C, Faust, J. W. Jr, and Ryan, C. E., (University of South Carolina, Columbia, SC 1974), p. 72 Google Scholar
[8] Gautier, M., Duraud, J. P., and Gressus, C. Le, J. Appl. Phys. 61, 574 (1987)Google Scholar
[9] Abdullayev, A. G., Khanjanov, S. K., Kasimova, G. N., and Fufayeva, T. G., Thin Solid Films 146, 265 (1987)Google Scholar
[10] Rutz, R. F., Appl. Phys. Lett. 28, 379 (1976)Google Scholar
[11] Zangvil, A. and Ruh, R., J. Am. Ceram. Soc. 71, 884 (1988)Google Scholar
[12] Nurmagomedov, Sh. A., Pikhtin, A. N., Razbegaev, V. N., Safaraliev, G. K., Tairov, Yu. M., and Tsvetkov, V. F., Soy. Phys. Semicond. 23, 100 (1989)Google Scholar
[13] Davis, R. F., private communicationGoogle Scholar
[14] Paisley, M. J., Sitar, Z., Posthill, J. B., Davis, R. F., J. Vac. Sci. Technol. A 7, 701 (1989)Google Scholar
[15] Harrison, W. A., Kraut, E. A., Waldrop, J. R., and Grant, R. W., Phys. Rev. B 18, 4402 (1978)Google Scholar
[16] Lambrecht, W. R. L. and Segall, B., Phys. Rev. B 40 (1989), in press Nov. 15 issueGoogle Scholar
[17] Lambrecht, W. R. L. and Segall, B., in Proceedings of the Acta/Scripta Metallurgica Conference on Bonding, Structure and Mechanical Properties of Metal/Ceramic Interfaces held in Santa Barbara, Jan. 1989, ed. Ashby, M. F., Evans, A. G., Hirth, J. P. and Rfihle, M., to be published in Acta/Scripta MetallurgicaGoogle Scholar
[18] Andersen, O. K., Phys. Rev. B 12, 3060 (1975); O. K. Andersen, O. Jepsen, and M. Šob, in Electronic Band Structure and its Applications, edited by M. Yussouff, (Springer, Heidelberg, 1987)Google Scholar
[19] Hohenberg, P. and Kohn, W., Phys. Rev. 136, B864 (1964); W Kohn and L. J. Sham, Phys. Rev. 140, A1133 (1965)Google Scholar
[20] von Barth, U. and Hedin, L., J. Phys. C 5, 1629 (1972)Google Scholar
[21] Lambrecht, W. R. L. and Segall, B., Phys. Rev. Lett. 61, 1764 (1988)Google Scholar
[22] Lambrecht, W. R. L., Segall, B. and Andersen, O. K., Phys. Rev. B 40 (1989), in pressGoogle Scholar
[23] Glötzel, D., Segall, B., and Andersen, O. K., Solid State Communn. 36, 403 (1980)Google Scholar
[24] Phillips, J. C., Bonds and Bands in Semiconductors (Academic, New York, 1973)Google Scholar
[25] Woodbury, H. H. and Ludwig, G. W., Phys. Rev. 124, 1083 (1961)Google Scholar
[26] Bechstedt, F. and Sole, R. Del, Phys. Rev. B 38, 7710 (1988)Google Scholar
[27] Landolt-Börnstein Numerical Data and Functional Relationships in Science and Technology, New Series, Edited by Madelung, O. (Springer, Berlin 1982) Vol.17 aGoogle Scholar