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Electronic Structure of Planar Faults and Point Defects in High Temperature Intermetallics

Published online by Cambridge University Press:  25 February 2011

J.M. Maclaren  and
C. Woodward
J.M. Maclaren
Affiliation:
Department of Physics, Tulane University, New Orleans, LA 70118
C. Woodward
Affiliation:
U.E.S Inc., Dayton, OH 45432
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Abstract

First principles electronic structure calculations, using the layer Korringa-Kohn-Rostoker method, are reported for isolated planar faults in TiAl. The calculated fault energies are discussed in the context of suggested superdislocation separation reactions. The influence of dilute impurities on fault energies are treated using the coherent potentialapproximation. Using this approach, the variation of fault energies in TiAl resulting from stoichiometry changes and from the addition of Mn axe calculated, and compared to recent experimental data.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 253: Symposium V – Application of Multiple Scattering Theory to Materials Science , 1991 , 387
Copyright
Copyright © Materials Research Society 1992

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References

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