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Electronic Structure of O-vacancy in High-k Dielectrics and Oxide Semiconductors
Published online by Cambridge University Press: 20 May 2011
Abstract
First-principles density functional calculations are performed to investigate the electronic properties of O-vacancy defects in high-k HfO2, Si/HfO2 interface, and amorphous oxide semiconductors. The role of O-vacancy in device performance is discussed by comparing the results of the GGA, hybrid density functional, and quasiparticle energy calculations.
Keywords
- Type
- Research Article
- Information
- MRS Online Proceedings Library (OPL) , Volume 1370: Symposium YY – Computational Semiconductor Materials Science , 2011 , mrss11-1370-yy01-01
- Copyright
- Copyright © Materials Research Society 2011